Opto-Structural Properties of Silicon Nitride Thin Films Deposited by ECR-PECVD

Charifi, H.; Slaoui, A.; Stoquert, J.P.; Chaib, H.; Hannour, A.

doi:10.4236/wjcmp.2016.61002

Cited by 16 publications

(5 citation statements)

References 34 publications

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“…The dissociation of this bonds may allow the formation of new Si-N bonds with a bond energy of 3.45 eV and the release of hydrogen [49,50]. This effect has been previously observed when SiN films are subjected to thermal annealing and it is often associated with a slight increase of the bandgap of nitrogen-rich films mainly due to the structural rearrangement of the bonding configuration of the Si-N bonds, which results in a smaller refractive index and in the densification of the SiN films [51].…”

Section: Published Bymentioning

confidence: 81%

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

et al. 2020

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We demonstrate the possibility of post-fabrication trimming of the response of nitrogen-rich silicon nitride racetrack resonators by using an ultraviolet laser. The results revealed the possibility to efficiently tune the operating wavelength of fabricated racetrack resonators to any point within the full free spectral range. This process is much faster than similar, previously presented methods (in the order of seconds, compared to hours). This technique can also be applied to accurately trim the optical performance of any other silicon photonic device based on nitrogen-rich silicon nitride.

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Section: Published Bymentioning

confidence: 81%

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

et al. 2020

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“…We fabricated the ZnO-derived nanoimprinted-texture structure with a Si-rich SiN inserted layer and evaluated the effect of the Si-rich SiN by changing the refractive index, which can be controlled by the deposition condition in plasma enhanced chemical vapor deposition [19][20][21][22][23][24]. The ZnO-derived texture is formed like a moth-eye structure using a sol-gel-type ZnO precursor.…”

Section: Experimental Methodsmentioning

confidence: 99%

Low surface reflectance by nanoimprinted texture with silicon-rich silicon nitride layer

Yoshinaga¹,

Ishikawa²,

Uraoka³

2017

J. Phys. D: Appl. Phys.

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Texture structure is usually fabricated on crystalline silicon (c-Si) solar cells to provide a low surface reflectance by an etching method such as alkali solution. In this study, we proposed nanoimprint lithography (NIL) as a fabrication process of the texture structure on the flat c-Si surface. The fabricated nanoimprinted texture which is a moth-eye structure by zinc oxide still has a high interface reflectance since the differences of the refractive index between the texture material and the c-Si substrate is large. We proposed an insertion of a Si-rich silicon nitride (SiN) layer between the texture and the substrate to solve this problem, and confirmed that the inserted Si-rich SiN shows remarkable benefits in terms of lowering the surface reflectance and providing a high carrier lifetime of the Si absorber, simultaneously.

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“…Charifi et al [ 68 ] characterized how the ammonia to silane ratio (R = [NH 3 ]/[SiH 4 ] in the range of 0.5 to 5 influences the refractive index of SiNx layers prepared by ECR-PECVD. It was revealed that the refractive index at 633 nm increased from 1.95 to 3.35, while R was decreased from 5 to 0.5.…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Hegedűs

Balázsi

2021

Materials

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Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization in several industries, from solar and semiconductor to coated glass production. The wide bandgap (~5.2 eV) of thin films allows for its optoelectronic application, while the SiNx layers could act as passivation antireflective layers or as a host matrix for silicon nano-inclusions (Si-ni) for solar cell devices. In addition, high water-impermeability of SiNx makes it a potential candidate for barrier layers of organic light emission diodes (OLEDs). This work presents a review of the state-of-the-art process techniques and applications of SiNx and SiNx:H thin films. We focus on the trends and latest achievements of various deposition processes of recent years. Historically, different kinds of chemical vapor deposition (CVD), such as plasma enhanced (PE-CVD) or hot wire (HW-CVD), as well as electron cyclotron resonance (ECR), are the most common deposition methods, while physical vapor deposition (PVD), which is primarily sputtering, is also widely used. Besides these fabrication methods, atomic layer deposition (ALD) is an emerging technology due to the fact that it is able to control the deposition at the atomic level and provide extremely thin SiNx layers. The application of these three deposition methods is compared, while special attention is paid to the effect of the fabrication method on the properties of SiNx thin films, particularly the optical, mechanical, and thermal properties.

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Opto-Structural Properties of Silicon Nitride Thin Films Deposited by ECR-PECVD

Abstract: Abstract

Cited by 16 publications

References 34 publications

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

Low surface reflectance by nanoimprinted texture with silicon-rich silicon nitride layer

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

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