Optoelectronic applications of LTMBE III–V materials

Whitaker, J.F.

doi:10.1016/0921-5107(93)90224-b

Cited by 69 publications

(17 citation statements)

References 28 publications

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“…This is the growth parameter regime of the so-called low temperature grown (LTG) GaAs, which has the potential for designing devices with special properties like extremely high resistivity, very short carrier lifetimes and a large electro-optic effect [14,15]. Recently LTG GaAs has gained additional interest due to the possibility to include high concentrations of magnetic impurities in the lattice, and the discovery of carrier-mediated ferromagnetism in these materials, which can be grown by using the GaAs(0 0 1)-c(4 Â 4) surface as a starting point [16,17].…”

Section: C(4 â 4)mentioning

confidence: 99%

“…Growth of high-quality crystals for optoelectronic devices occurs in the 2 Â 4 phase around 580-600 C. Low temperature grown (LTG) GaAs is grown on the c(4 Â 4) reconstruction between 200 and 300 C which is used in a variety of exotic applications such as transition metal doped GaAs for ''spintronic'' applications, or extremely high resistivity and very short carrier lifetime applications [14][15][16][17]. The changes in reconstruction occur because the chemical potential of the two species are changing Reprinted with permission from [18].…”

Section: Surface Phase Diagrammentioning

confidence: 99%

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Arsenic-rich GaAs(0 0 1) surface structure

LaBella

Krause

Ding

et al. 2005

Surface Science Reports

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Section: C(4 â 4)mentioning

confidence: 99%

Section: Surface Phase Diagrammentioning

confidence: 99%

Arsenic-rich GaAs(0 0 1) surface structure

LaBella

Krause

Ding

et al. 2005

Surface Science Reports

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“…Most commonly used switches are based on an epitaxial GaAs layers grown by molecular-beam-epitaxy (MBE) technique at relatively low (200°C to 300°C) substrate temperatures and afterwards annealed at 600°C or higher temperatures [1,2]. Besides the unique set of parameters -a Recently, several types of femtosecond solid-state and fiber lasers emitting at the near infrared wavelengths between 1 and 1.55 μm have been developed [3,4].…”

Section: Introductionmentioning

confidence: 99%

Terahertz time-domain-spectroscopy system using a 1 micron wavelength laser and photoconductive components made from low-temperature-grown GaAs

Bičiūnas

Adamonis

Krotkus

2011

J Infrared Milli Terahz Waves

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A terahertz time-domain spectroscopy (TDS) system based on a femtosecond Yb: KGW laser, photoconductive emitters and detectors made from as-grown and from annealed at moderate temperatures (~400°C) low-temperature-grown GaAs (LTG GaAs) layers was demonstrated. The measured photoconductivity of these layers increased linearly with the optical power, showing that transitions from the defect band to the conduction band are dominant. The largest amplitude THz pulse with a useful signal bandwidth reaching 3 THz and its signal-to-noise ratio exceeding 50 dB was emitted by the device made from the LTG GaAs layer annealed at 420°C temperature. The detector made from this material was by an order of magnitude less sensitive than conventional GaBiAs detectors.

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“…Dozens of examples of time-domain electro-optic-sampling measurements have appeared in the literature over the past 20 years. They highlight the applications of the technique in high-bandwidth-photodetector characterization [3], discrete-device analysis [4], the extraction of clock and large-signal waveforms from within digital and nonlinear circuits [5], the measurement of pulsed, terahertz signals [6], and other areas.…”

mentioning

confidence: 99%

Electro-optic field-mapping as a diagnostic tool for microwave circuits and antenna arrays

Whitaker

Yang

Reano

et al. 2002

International Topical Meeting on Microwave Photonics MWP-02

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The effectiveness of an optical-fiber-mounted electro-optic probe as a scanning electric-fieldmapping tool is demonstrated in diagnostic measurements on microwave and millimeter-wave circuits, antennas, and arrays. A combined electric-field and thermal-imaging capability will also be discussed.The interaction of optical beams and electrical signals in an electro-optic medium provides a fundamental and convenient means for introducing microwave or digital data into an optical transmission channel. This is accomplished through the well-known process of electro-optic modulation. Similarly, the characteristics of an electrical waveform can also be determined using an optical beam when this beam is coincident with, and intensity modulated by, the part of the unknown electrical signal that enters an appropriately oriented electro-optic medium. When a mode-locked laser having a pulse duration much shorter then an electrical feature to be measured is used to interrogate one small part of a repetitive waveform (over an interval At), then the assembly of many "At" constituents from different parts of the waveform into a representation of the original signal is known as electro-optic sampling [1,2]. Dozens of examples of time-domain electro-optic-sampling measurements have appeared in the literature over the past 20 years. They highlight the applications of the technique in high-bandwidth-photodetector characterization [3], discrete-device analysis [4], the extraction of clock and large-signal waveforms from within digital and nonlinear circuits [5], the measurement of pulsed, terahertz signals [6], and other areas. In the diagnostic testing of linear microwave systems or components, another embodiment of electro-optic sampling in which the amplitude and phase of a single frequency are measured at a variety of spatial locations has also been developed [7]. These measurements of spatial field distributions have increased in popularity for the characterization of both active [8] and passive [9] circuits, where the microwave signals are either guided [IO] or radiating [I I]. They can be made using either an electro-optic substrate [I21 or an electro-optic medium externally inserted into a fringing or radiated electric field [13].In this paper, we will discuss the most highly evolved electric-field mapping system that, to our knowledge, has been developed to date. It is a system that: separately distinguishes three orthogonal vector components of the electric field; senses both amplitude and phase; is flexibly positioned due to optical-fiber coupling of its probe; has single-micrometer spatial resolution; has greater than 100-GHz bandwidth; and has a low invasiveness even with its probe positioned in the near field of a device under test (DUT). Furthermore, the system can be modified so that information contained in part of the optical beam is also analyzed to reveal the temperature at the probe location. At the same time the probe is scanned to map out the electric field, it can thus also construct a thermal image. Figure I il...

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Optoelectronic applications of LTMBE III–V materials

Cited by 69 publications

References 28 publications

Arsenic-rich GaAs(0 0 1) surface structure

Arsenic-rich GaAs(0 0 1) surface structure

Terahertz time-domain-spectroscopy system using a 1 micron wavelength laser and photoconductive components made from low-temperature-grown GaAs

Electro-optic field-mapping as a diagnostic tool for microwave circuits and antenna arrays

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