2021
DOI: 10.1007/s11467-021-1052-2
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Optoelectronic characteristics and application of black phosphorus and its analogs

Abstract: The tunable bandgap from 0.3 eV to 2 eV of black phosphorus (BP) makes it to fill the gap in graphene. When studying the properties of BP more comprehensive, scientists have discovered that many two-dimensional materials, such as tellurene, antimonene, bismuthene, indium selenide and tin sulfide, have similar structures and properties to black phosphorus thus called black phosphorus analogs. In this review, we briefly introduce preparation methods of black phosphorus and its analogs, with emphasis on the metho… Show more

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Cited by 21 publications
(3 citation statements)
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References 218 publications
(282 reference statements)
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“…BP exhibits a higher hole mobility of 1000 cm 2 V −1 s −1 , excellent mechanical flexibility, and a wide tunable direct bandgap ranging from 0.3 eV for bulk to 2 eV for monolayer configurations. 158–161 BP-based UV-NIR photodetectors have shown a high specific detectivity of 3 × 10 13 Jones and an excellent photoresponsivity of 9 × 10 4 A W −1 (highest amongst other 2D materials). 159 The UV sensitivity and presence of defect levels due to ambient oxidation of BP have been exploited to build optoelectronic synaptic devices.…”
Section: Advantages Of 2d Materials For Optoelectronic Synaptic Devicesmentioning
confidence: 99%
“…BP exhibits a higher hole mobility of 1000 cm 2 V −1 s −1 , excellent mechanical flexibility, and a wide tunable direct bandgap ranging from 0.3 eV for bulk to 2 eV for monolayer configurations. 158–161 BP-based UV-NIR photodetectors have shown a high specific detectivity of 3 × 10 13 Jones and an excellent photoresponsivity of 9 × 10 4 A W −1 (highest amongst other 2D materials). 159 The UV sensitivity and presence of defect levels due to ambient oxidation of BP have been exploited to build optoelectronic synaptic devices.…”
Section: Advantages Of 2d Materials For Optoelectronic Synaptic Devicesmentioning
confidence: 99%
“…At present, the effective generation of ultrashort pulses (USPs) has been implemented using various ML techniques [ 3 ]. Based on semiconductor materials, there are various types of saturable absorbers, such as SESAM [ 4 ], topological insulators [ 5 ], black phosphorus-based saturable absorbers (SA) and their analogs [ 6 ], bismuthene SA [ 7 ], ReSe 2 [ 8 ], MoS 2 [ 9 ], SnS 2 [ 10 ]. SAs and other 2D van der Waals materials [ 11 , 12 ] have ultrafast saturable absorption at the infrared spectral region.…”
Section: Introductionmentioning
confidence: 99%
“…Passively mode-locked fiber lasers have been widely applied in industrial purposes and basic research studies, such as medical imaging, [1][2][3] optical communication, [4][5][6][7] laser surgery, [8][9][10] seed source, 11 and so on. 12,13 The abundant nonlinear phenomena and different types of pulses generated by passively mode-locked fiber lasers are the reason that they can be widely used.…”
Section: Introductionmentioning
confidence: 99%