Optoelectronic devices based on the integration of halide perovskites with silicon-based materials

Abstract

Controlling the preparation of perovskite materials on the Si optoelectronics platform is a crucial step to realize perovskite-based optoelectronic devices. This review highlights the recent progress and remaining challenges in Si-based perovskite optoelectronic devices.

Cs2AgxNa1−xBiyIn1−yCl6 perovskites approaching photoluminescence quantum yields of 100%

“…The bandgap E g of CANBIC perovskites can therefore be evaluated by analyzing both absorption and PLE spectra. Both were found to show linear edges when plotted using the Tauc equation for direct allowed interband electronic transitions, in the case of PLE spectra -as functions of (PLI×hv) 2 . We followed the dependence of the bandgap on y for three series of CANBIC perovskites with Bi content changing through 3 orders of magnitude (more details are provided below in the discussion of PL QY measurements).…”

“…The tremendous progress in the field of light conversion using lead-halide perovskite compounds achieved within an unprecedentedly short time period [1][2][3][4] stimulated a massive advancement in many related areas, including exploration of tandem perovskite-based photovoltaic materials 1,2,[4][5][6] , search for low-dimensional (2D, 0D) forms of halide perovskite absorbers 1,4,5,[7][8][9][10][11][12] , as well as attempts to develop lead-free perovskite compounds with light harvesting properties comparable with those of lead-halide perovskites 1,3,4,8,[12][13][14][15][16] . The latter research direction highlighted many promising compounds, either directly stemming from lead-based ancestors, such as tin-halide perovskites 3,8,[12][13][14][15][16] , or those belonging to a family of double-cation perovskites A I M I M III X 6 , where A is an alkali cation, X is a halide, and the couple of M I and M III represents an isovalent substitution of two Pb II cations in the lead-halide (APbX 3 ) 2 perovskite structure 3,8,[12][13][14][15][16] .…”

Ab-initio Study of Structural and Electronic Properties of Perovskite Nanocrystals of the CsSn[Br1−xIx]3 Family

“…The PDOS plots can be explained by two aspects: orbitals, which contribute near the band edges, and the general contribution of states. In the CsSnBr3 system, electrons of the I (d) -state and Sn (p) -state contribute near the valence band (CB) and conduction bands (CB), respectively (Figure 9 Thus, our results can contribute to understanding some of the features of their optical properties, which are important for the practical application of the studied systems, and may turn out to be of interest for researchers searching for materials with predetermined and programmed optoelectronic properties [39][40][41][42].…”

Directed self-assembly of organic crystals into chip-like heterostructures for signal processing

“…As an information transmission medium, photons have the advantages of high speed, low energy consumption, and low noise compared with electrons [3]. Therefore, as a promising solution for future massive data transmission and processing, optoelectronic composite integrated systems have received more attention [4,5], with the focus on preparing basic materials and exploring feasible strategies [6][7][8].…”