2022
DOI: 10.1021/acs.jpclett.2c02226
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Optoelectronic Modulation of Silver Antimony Sulfide Thin Films for Photodetection

Abstract: Silver antimony sulfide, as a ternary chalcogenide, has attracted great attention in the field of optoelectronics in recent years. In particular, it has appealing properties, such as excellent stability, solution processability, and versatile composition tunability. Benefiting from the recent development of processing techniques, AgSbS2 has emerged as a promising candidate for next-generation, thin-film photovoltaics. On the contrary, AgSbS2-based photodetectors have been barely reported. In this work, we syst… Show more

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Cited by 16 publications
(20 citation statements)
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“…The introduction of Ag­(I) in Sb 2 S 3 precursors yielded a decreased E g (1.51 eV) and a larger Urbach Energy ( E u ) of 147 meV. It is worth noting that the bandgap and Urbach tails may vary slightly owing to the film processing and could also be dependent on the composition . Overall, the comparison between antimony- and bismuth-based chalcogenides reveals that the latter present enhanced absorption coefficients (α) and reduced bandgaps.…”
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confidence: 97%
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“…The introduction of Ag­(I) in Sb 2 S 3 precursors yielded a decreased E g (1.51 eV) and a larger Urbach Energy ( E u ) of 147 meV. It is worth noting that the bandgap and Urbach tails may vary slightly owing to the film processing and could also be dependent on the composition . Overall, the comparison between antimony- and bismuth-based chalcogenides reveals that the latter present enhanced absorption coefficients (α) and reduced bandgaps.…”
mentioning
confidence: 97%
“…It is worth noting that the bandgap and Urbach tails may vary slightly owing to the film processing and could also be dependent on the composition. 7 Overall, the comparison between antimony-and bismuthbased chalcogenides reveals that the latter present enhanced absorption coefficients (α) and reduced bandgaps. The Bi 2 S 3 thin films possess a bandgap of 1.46 eV and E u of 113 meV, and the AgBiS 2 films have the smallest bandgap of 1.15 eV with a E u of 116 meV.…”
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confidence: 99%
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