Optoelectronic properties exploration of native point defects on GaN nanowires

Lu, Feifei; Liu, Lei

doi:10.1016/j.apsusc.2021.150600

Cited by 4 publications

(1 citation statement)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The formation of defects on the surface of crystals when exposed to atomic particles has always been of interest to researchers due to the widespread use of these materials in surface engineering, 1–3 optoelectronics, 4–9 photovoltaics 10–13 space materials science, 14,15 and other fields of science and technology 8,16–20 . Today, high‐tech materials, in contrast to bulk materials, have special surface properties with special performance characteristics 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Sharopov

Kaur

Kurbanov

et al. 2022

Surface & Interface Analysis

View full text Add to dashboard Cite

We explore the experimental and simulation results of the formation of defects on the surface of lithium fluoride thin films under irradiation with different mass ions using total current (TC) spectroscopy, secondary ion mass spectroscopy (SIMS), and the Stopping and Range of Ions in Matter (SRIM) software package. A comparative study was carried out with ions of different masses, and inconsistencies in the occurring physical phenomena between our early concepts were found. It is shown that in the case of heavy ions irradiation, they are implanted and appear as substitutional atoms into the bulk of the crystal. For ions with the smallest ion mass, the distribution of interstitial defects is greater on the surface than in the bulk of the crystal. An attempt is made to explain the formation of some defects on the surface (formed peaks in the TC spectra) by the method of computer simulation.

show abstract

Section: Introductionmentioning

confidence: 99%

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Sharopov

Kaur

Kurbanov

et al. 2022

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy

Gómez Ruiz,

Brubaker,

Bertness

et al. 2024

APL Materials

View full text Add to dashboard Cite

Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area growth using a Si3N4 mask and molecular beam epitaxy. Systematic modulation of the emission along the nanowire axis is observed in spectrally resolved cathodoluminescence linescans. We show that this intensity change is an indicator of unintentional Si incorporation during growth resulting from the interaction between the impinging Ga atoms and the mask material. The gradual reduction of the cathodoluminescence intensity along the nanowire highlights the important role of the growth geometry within the synthesis reactor, with shadowing from the elongating nanowires inhibiting the reaction with the mask. This gradient in Si doping is confirmed by the quenching of the longitudinal optical phonon line measured in Raman spectra along the nanowire axis. The corresponding carrier density is derived from the frequency of the coupled phonon–plasmon mode. The spectroscopic identification of inversion domain boundaries in the majority of the nanowires is also attributed to the Si incorporation. From temperature dependent cathodoluminescence experiments, we derive the activation energy for excitons bound to these defects.

show abstract

Formation of defects on the surface of LiF crystals under irradiation with different ions mass

Sharopov

Gopparov

Rashidov

et al. 2022

Radiation Effects and Defects in Solids

View full text Add to dashboard Cite

Optoelectronic properties exploration of native point defects on GaN nanowires

Cited by 4 publications

References 26 publications

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy

Formation of defects on the surface of LiF crystals under irradiation with different ions mass

Contact Info

Product

Resources

About