Optoelectronic Properties of Antimony Doped Tin Oxide Thin Films Obtained by Spray Pyrolysis

Abstract

Antimony doped tin oxide (ATO) thin films are deposited on corning glass substrate using the spray pyrolysis technique. The experimental parameters such as distance between the substrate and source (10-30 cm), substrate temperature (350-450°C) and atmospheres (Nitrogen and Forming gas) are varied to study their effect on the properties of ATO thin films. The ATO thin film annealed at 425°C exhibits the lowest electrical resistivity of 2.23×10 -2 Ω-cm. Besides, the film annealed in the nitrogen atmosphere showed a less resistivity value of 9.06×10 -3 (Ω-cm) than the forming gas atmosphere. The film doped with 3 at% of Sb revealed the highest figure of merit value of 11.45x10 -2 Ω -1 . The preferential orientation is observed at the (200) diffraction plane in all the cases from the structural studies. Furthermore, the intensity of the diffraction planes decreases as the temperature increases. The average transmittance of 75% is obtained for ATO thin films.

Understanding the role of Niobium, Molybdenum and Tungsten in realizing of the transparent n-type SnO2

“…Introducing the extrinsic dopants is a common method to realize the high-performance n-type TCMs. For example, the F, Sb and Ta could induce SnO 2 to be excellent n-type TCMs [14,17,18]. Although the Nb, Mo and W-doped SnO 2 have been reported in experiments [19][20][21], due to the difference in fabrication methods and defect concentration, it is impossible to make meaningful comparisons between these point defects.…”

Self-Diffusion versus Intentional Doping: Beneficial and Damaging Impact on Hematite Photoanode Interfaces

“…In contrast, glass-based transparent conductive oxides (TCOs) have emerged as an attractive and frequently preferred alternative due to their favorable balance between cost-effectiveness and performance. − These substrates offer high carrier concentration, excellent optical transparency exceeding 80% from 500 to 800 nm, and relatively lower cost compared with precious metals. Antimony-doped tin oxide (ATO), indium tin oxide (ITO), and fluorine-doped tin oxide (FTO) are widely recognized as notable substrate examples commonly employed in most electrochemical applications including PEC systems. − From the available TCOs, FTO is frequently preferred over other options because of its superior thermal and chemical stability. This stability becomes particularly advantageous when high-temperature treatments are required. ,− Unlike ITO, which experiences a significant decrease in conductivity when exposed to temperatures above 350 °C, , FTO remains stable up to 800 °C. − Even at higher temperatures, FTO can maintain acceptable conductivities as long as the treatment duration is limited to less than 30 min. , …”