Tantalum nitride is considered a promising material for photoelectrochemical water splitting, however its charge transport properties remain poorly understood. We investigated polaronic and band transport in Ta 3 N 5 using first-principles calculations. We first studied the formation of small polarons using density-functional theory (DFT) including DFT+U and hybrid functionals. We found that electron small polarons may occur but hole polarons are not energetically favorable.The estimated polaronic mobility for electrons is at least three orders of magnitude smaller than that measured in Ta 3 N 5 films, suggesting that the main transport mechanism for both electrons and holes is band-like. Since band transport is strongly affected by the carrier effective masses, and Ta 3 N 5 in known to have large electron and hole effective masses, we also investigated whether substitutional impurities or strain may help lower the effective masses. We found significant reduction in both electron and hole effective masses (up to 17% for electron and 39% for hole) under applied strain, which may lead to substantial improvement (up to 30% for electron and 15% for hole) in the carrier mobilities.