Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition

Ullrich, Bruno; Sakai, Hisashi; Segawa, Y.

doi:10.1016/s0040-6090(00)01902-7

Cited by 85 publications

(50 citation statements)

References 18 publications

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“…The emission peak of CdS Ќ and CdS ʈ centers at 2.45 eV and 2.27 eV, respectively. 8 In this letter, we demonstrate that the dichroism of oriented thin-film CdS is reflected by the emission properties if the bulk is excited. For this purpose two-photon excitation in the femtosecond regime at 1.54 eV was used.…”

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confidence: 74%

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Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition

Ullrich

Schroeder

Sakai

et al. 2002

Applied Physics Letters

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The photoluminescence of oriented thin-film CdS on glass formed by laser deposition was investigated employing 200 fs, 1.54 eV laser pulses at room temperature. The ultrafast excitation caused a two-photon absorption process, which results in purely green emission at the band gap. The spectra are fitted very well by the application of the van Roosbroeck–Shockley relation, density of states, and Urbach’s rule demonstrating the intrinsic character of the radiative recombination. It is further shown that the energy position of the emission peak depends on the polarization of the impinging laser beam due to the dichroism of the highly oriented films.

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confidence: 74%

“…The intrinsic features of CdS ʈ do not appear in the SPL due to the influence of traps and grain boundaries. 8 Therefore, the comparison of SPL and TPL shows that TPL reveals the intrinsic features of the films independent of imperfections. This fact was confirmed by the investigation of CdS films formed by spray pyrolysis on pyrex ® .…”

mentioning

confidence: 97%

Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition

Ullrich

Schroeder

Sakai

et al. 2002

Applied Physics Letters

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“…A weak CdS (002) peak and intense CdS (100) and CdS (110) peaks indicate a parallel orientation of the c-axis. 14 The XRD results show that the deposited material present a mixture of the two orientations. This could be explained by a sudden solidification of the material on the substrate which prevents the slower growth on a preferential direction.…”

Section: Surface Crystallinitymentioning

confidence: 97%

Femtosecond Pulsed Laser Deposition of Nanostructured CdS Films

et al. 2010

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In this work we report an investigation of the properties of nanostructured deposits obtained from femtosecond pulsed laser deposition of CdS sintered targets. Specifically, we address the effect of laser irradiation wavelength, laser fluence and substrate temperature (from 25 to 450 ºC). The composition of the deposits was characterized using X-ray photoelectron spectroscopy (XPS), their crystallinity by Xray diffraction (XRD) and the surface morphology was studied by environmental scanning electron microscopy (ESEM) and atomic force microscopy (AFM). It has been found that the smallest nanoparticles, with an average diameter of 25 nm and a narrow size distribution, together with particulates in the range 80-120 nm, are obtained at the shortest laser wavelength of 266 nm on room temperature substrates. Deposits do not contain microscopic droplets in any of the explored conditions. 3

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“…Considering the advantages laid down by Zn-doping of CdS thin films, we focus our work on investigation of physical properties of Zn doped CdS films in order to improve the performance of optoelectronic devices and find their new applications. High quality undoped and doped CdS semiconductor thin films have been prepared by a wide range of methods, such as thermal evaporation [13], spray pyrolysis [14], sputtering [15], pulsed laser deposition (PLD) [16], molecular beam epitaxy (MBE) [17], chemical bath deposition (CBD) [18] and electro Investigations on the structural, morphological, optical and electrical properties of undoped. .…”

Section: Introductionmentioning

confidence: 99%

Investigations on the structural, morphological, optical and electrical properties of undoped and nanosized Zn-doped CdS thin films prepared by a simplified spray technique

Anbarasi¹,

Nagarethinam²,

Balu³

2014

Materials Science-Poland

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CdS and Zn-doped CdS (CdS:Zn) thin films have been deposited on glass substrates by spray pyrolysis technique using a perfume atomizer. The influence of Zn incorporation on the structural, morphological, optical and electrical properties of the films has been studied. All the films exhibit hexagonal phase with (0 0 2) as preferential orientation. A shift of the (0 0 2) diffraction peak towards higher diffraction angle is observed with increased Zn doping. The optical studies confirmed that the transparency increases as Zn doping level increases and the film coated with 2 at.% Zn doping has the maximum transmittance of about 90 %. The sheet resistance (R sh ) decreases as the Zn-doping level increases and a minimum value of 1.113 × 10 3 Ω/sq is obtained for the film coated with 8 at.% Zn dopant. The CdS film coated with 8 at.% Zn dopant has the best structural, morphological and electrical properties.

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Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition

Cited by 85 publications

References 18 publications

Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition

Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition

Femtosecond Pulsed Laser Deposition of Nanostructured CdS Films

Investigations on the structural, morphological, optical and electrical properties of undoped and nanosized Zn-doped CdS thin films prepared by a simplified spray technique

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