Optoelectronic resonant cavity technology based on inversion channel devices

Evaldsson, P.A.; Daryanani, S.; Cooke, P.; Taylor, G.W.

doi:10.1007/bf00625820

Cited by 19 publications

(5 citation statements)

References 20 publications

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“…First, the Fermi level is constant through the structure from the gate to the collector which is expressed 'ii, * _øs* = EFpc 'Fpb (9) where /XEFpc, LEFb depend on the dopings in the collector and barrier regions respectively. Second, the Fermi level in the barrier (gate contact region) must be equivalent to that in the quantum well which is expressed EFpb'bv+Egqw+EFn (10) We then substitute (2)-(6) into (1) to obtain 1 equation in the unknowns Vb* , 4*and EFn* . It is solved together with (9) and (10) to obtain the equilibrium values ofthe voltages from which the equilibrium charges n0 and p are also obtained.…”

Section: Equilibrium Boundary Conditionsmentioning

confidence: 99%

“…Second, the Fermi level in the barrier (gate contact region) must be equivalent to that in the quantum well which is expressed EFpb'bv+Egqw+EFn (10) We then substitute (2)-(6) into (1) to obtain 1 equation in the unknowns Vb* , 4*and EFn* . It is solved together with (9) and (10) to obtain the equilibrium values ofthe voltages from which the equilibrium charges n0 and p are also obtained.…”

Section: Equilibrium Boundary Conditionsmentioning

confidence: 99%

“…P type ohmic contacts are formed to the top (designated the gate) and to the bottom (designated the collector) layers. This is the structure of the Heterostructure Field Effect Transistor (HFET) [4 -8] which is the FET basis for optoelectronic integration in the Inversion Channel Technology [9][10][11][12]. The intersubband detection occurs in the quantum wells forming the channel and thus the sensing element is compatible with the baseline HFET technology.…”

Section: The Inversion Channel Intersubband Detectormentioning

confidence: 99%

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<title>GaAs-based CCD structure for MWIR/LWIR imaging applications</title>

Taylor¹,

Kwan

2000

SPIE Proceedings

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A new approach to sensing with intersubband absorption is introduced. In contrast to the conventional Quantum Well Infrared Photodetector (QWIP) which is a multi-quantum well device, our structure has 1 -3 wells and uses resonant enhancement to achieve nearly complete absorption. In the QWIP the dark current is limited by the quantum well barrier in the range of 0.125 ev and thus cryogenic cooling is required in general to achieve BLIP operation. In the new structure, the dark current is limited by the band gap of GaAs/A1GaAs layers ( 1 .4eV). This difference implies that BLIP operation may be possible near room temperature. The detecting quantum well is used to form the storage well of an active pixel or a CCD device and the intersubband absorption mechanism removes charge from the quantum well starting from the full well condition. The state of depletion of the well is then clocked to the output amplifier as in a conventional CCD using noise reduction techniques such as correlated double sampling. Therefore, the hybrid bump bonding of the Si ROIC is no longer required. In this paper, we describe the concept and its advantage vis -à-vis the existing approach and a preliminary analysis ofthe sensitivity ofthe detection.

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Section: Equilibrium Boundary Conditionsmentioning

confidence: 99%

Section: Equilibrium Boundary Conditionsmentioning

confidence: 99%

Section: The Inversion Channel Intersubband Detectormentioning

confidence: 99%

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<title>GaAs-based CCD structure for MWIR/LWIR imaging applications</title>

Taylor¹,

Kwan

2000

SPIE Proceedings

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“…This state feeds a zero into the logic function. When light is incident on the device, it switches to the on state and this occurs in a time AtON = QswTp + tint (1) where Qsw is the channel charge to cause switching [12] and I is the photocurrent where RL is the load resistance and Cd is the device capacitance. Therefore the recovery locus is as shown in the Fig.4a for the typical case that the charge-up time is much larger than the time to drain the channel.…”

Section: Does Ole Conversion (A)conflgurationmentioning

confidence: 99%

“…The integration of optical devices with electronics is an emerging technology base with potential applications for the interconnection of electronic chips and optical signal processing functions [1,2]. A critical requirement for a successful technology is the compatibility of the epitaxial growth structures and the fabrication sequences of the optical and electronic components.…”

Section: Introductionmentioning

confidence: 99%

<title>Inversion channel detection circuits for optoelectronic interconnect</title>

Taylor

Evaldsson²,

Vang

et al. 1994

SPIE Proceedings

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The inversion channel technology is a new approach to monolithic optoelectronic integration that offers the possibility of FET logic, optical detection and laser emission from a single chip. The detection is performed by the three terminal configuration of the DOES biassed in the off state. Incident light switches the DOES into the on state and recovery from the on state is provided by the conduction of electrons from the inversion channel through a FET connected to the third terminal. In this paper we demonstrate the functionality of this operation with an OEIC that integrates the three terminal DOES device with four FETs. The operation is discussed both as an optical clock and as as an electrically clocked optical gate. Sensitivity issues are considered.

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