Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS₂ van der Waals Heterostructure under UV–Ozone Treatment

Abstract

Memristive switching devices with electrically and optically invoked synaptic behaviors show great promise in constructing an artificial biological visual system. Through rational design and integration, 2D materials and their van der Waals (vdW) heterostructures can be applied to realize multifunctional optoelectronic devices. Here, a multifunctional optoelectronic synaptic memtransistor based on a SnSe/MoS 2 vdW p-n heterojunction to simulate the human biological visual system is reported. By employing simple mild UV-ozone treatment, the device exhibits reversible resistive switching (RS) behavior with switching ratio up to 10 3 . The retina-like selective response to different input light wavelengths is activated, as well as programmable multilevel resistance states and long-term synaptic plasticity. Moreover, memory and logic functions analogous to those found in the visual cortex of the brain are performed by controlling the optical and electrical input signals. This work proposes a feasible strategy to modulate RS in vdW heterostructures for memristive devices, which show significant potential for neuromorphic processing.

Recent Advances in Tactile Sensory Systems: Mechanisms, Fabrication, and Applications

“…In order to reach this target, many researchers are devoted to reducing the power consumption of neuromorphic tactile sensors from the aspect of materials and structures. Currently, 2D materials such as graphene [ 178 , 179 , 180 , 181 , 182 ], transition-metal dichalcogenides [ 183 , 184 , 185 , 186 , 187 , 188 ], and black phosphorus [ 189 , 190 , 191 , 192 ], are emerging as platforms to be constructed into tactile and synaptic sensors with low power consumption, low working voltage, and high flexibility. In addition, special structures can help improve sensing performance.…”

Technology and Integration Roadmap for Optoelectronic Memristor

“…[330] Two-dimensional semiconductors have difficulty forming high-quality electrical connections because of their layered structure, which results in van der Waals bonding to other 2D and 3D materials. [329,331] Until now, new theoretical and experimental advancements like charge transport over a 2D material interface have contributed to building routes to the realization of low-resistance connections. Also, the energy efficiency of the operation in a highly integrated neuromorphic circuit in 2D material-based devices is greatly improved by reducing power consumption at the single-device system level.…”

“…[57,88,251,319,327] This makes it suited for heterojunction integration in particular: i) they can be easily interfaced with production information and control system (PICs) and layered to produce heterogeneous structures with complicated architecture; ii) because of their thin thickness and lack of complete internal reflection, they can achieve very high light extraction efficiency without additional processing, enabling effective single-photon transfer between the host and base PIC; iii) the accessibility of 2D materials manufactured with great wafer-level homogeneity is increasing. [85,246,313,328,329] Problems with contacts, interfaces to dielectrics, and doping are among the most challenging aspects of designing 2D devices. [330] Two-dimensional semiconductors have difficulty forming high-quality electrical connections because of their layered structure, which results in van der Waals bonding to other 2D and 3D materials.…”

“…[ 57,88,251,319,327 ] This makes it suited for heterojunction integration in particular: i) they can be easily interfaced with production information and control system (PICs) and layered to produce heterogeneous structures with complicated architecture; ii) because of their thin thickness and lack of complete internal reflection, they can achieve very high light extraction efficiency without additional processing, enabling effective single‐photon transfer between the host and base PIC; iii) the accessibility of 2D materials manufactured with great wafer‐level homogeneity is increasing. [ 85,246,313,328,329 ]…”

In-sensor neuromorphic computing using perovskites and transition metal dichalcogenides

“…Despite the exceptional stability, compact cell size, high integration density, flexible temperature sensitivity and remarkable stability exhibited by metal oxide-based neuromorphic devices [33][34][35][36][37][38], their functionality remains relatively subpar, particularly in terms of optoelectronic response properties. In this regard, perovskites and TMDs based neuromorphic devices have demonstrated outstanding performance, thereby facilitating their applications for constructing in-sensor computing systems [39][40][41][42][43][44][45][46].…”