“…1,2 The outstanding optoelectronic properties of PDIs are attributed to their strong absorption at the Q-band (500-700 nm) and B-band (400-450 nm) of the UV visible region, near-unity photoluminescence quantum yields (PLQY), and good photochemical and thermal stability. [3][4][5] Furthermore, their n-type semi-conducting properties make them suitable candidates for their extensive utilization in numerous electronic and optical devices such as organic light-emitting diodes (OLEDs), organic solar cells (OSCs), photosensitizes, sensors, organic field effect transistors (OFETs), light harvesting arrays, dye lasers, and supercapacitors (SCs). [6][7][8][9][10][11] PDIs can structurally be modified by functionalization with electron donor or electron acceptor groups at the peri position (imide position) and/or in the bay region (1,6,7,12-positions) (Fig.…”