Orbital occupation, atomic moments, and magnetic ordering at interfaces of manganite thin films

Aruta, C.; Ghiringhelli, G.; Bisogni, Valentina; Braicovich, L.; Brookes, N. B.; Tebano, A.; Balestrino, G.

doi:10.1103/physrevb.80.014431

Cited by 91 publications

(111 citation statements)

References 49 publications

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“…Equivalently, here we fix the light helicity and measure XAS for two opposite magnetization directions. Figure 2b shows the XMCD signal measured for the LSMO layers 14,28,29 . At the Fe L 3,2 edge (Fig.…”

Section: Resultsmentioning

confidence: 99%

Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

et al. 2015

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At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO 3 (LFO) and ferromagnetic La 0.7 Sr 0.3 MnO 3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.

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Section: Resultsmentioning

confidence: 99%

Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

et al. 2015

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“…Ultrathin TMO films have served as model systems for studies of their influence on the competition between different spin-orbital ordering patterns in the plane of the film. 38,39 Right at the interface, the local crystalline environment of the transition metal ions differs strongly from the bulk-like environment just one unit cell away (Fig. 5).…”

Section: Spin and Orbital Reconstructionsmentioning

confidence: 99%

Emergent phenomena at oxide interfaces

et al. 2012

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BASIC NOTIONSTransition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. 1 In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. 2 Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r  -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric SLAC-PUB-14626 SIMES,

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“…5͒ films, where the strainselected e g orbital occupation prevails. 12,13 These results clearly indicate an important role of lattice and orbital effect in AMR of manganites. For charge-orbital-ordered manganites, the CMR effect is much larger and is always accompanied with a magnetic-field-induced MIT, during which a ferromagnetic metal generally takes place the insulating COO state and orbital reconstruction occurs.…”

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confidence: 52%

“…15 The collective JT distortion of the MnO 6 octahedron accompanied with the COO formation leads to an unquenching of the 3d orbits, thus the appearance of spin-orbital coupling effects. 13,15 The evolution of collective JT distortion with decreasing temperatures could result in an increase of AMR below T CO . Meanwhile, the decrease of the AMR could be further ascribed to the suppression of JT distortion at field-induced MIT, which has also been observed in La 0.69 Ca 0.31 MnO 3 samples.…”

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Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

Chen

Sun

Zhao

et al. 2009

Applied Physics Letters

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Orbital occupation, atomic moments, and magnetic ordering at interfaces of manganite thin films

Cited by 91 publications

References 49 publications

Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

Emergent phenomena at oxide interfaces

Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

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