Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes

Xu, Sheng; Xu, Chen; Liu, Ying; Hu, Youfan; Yang, Rusen; Yang, Qing; Ryou, Jae Hyun; Kim, Hee Jin; Lochner, Zachary; Choi, Suk Soon; Dupuis, R. D.; Wang, Zhong Lin

doi:10.1002/adma.201002134

Cited by 214 publications

(208 citation statements)

References 34 publications

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“…The inset image shows the LED when lit up [254]. Reproduced with permission based on position-controlled arrays of n-ZnO nanowires on a p-GaN thin film substrate [371]. The device was fabricated by combining a low temperature wet chemical method and electron beam lithography [48].…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

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One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

“…The pitch is 4 µm and the resolution is 6350 dpi. [371]. Reproduced with permission smaller than in the n-ZnO.…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…[11][12][13][14][15][16] Among such systems, ZnO has always stood out due to its attractive wide band gap (3.37 eV at room temperature) with a high exciton binding energy (60 meV), which makes it appropriate for short wavelength optoelectronic applications, such as ultra-violet (UV) detectors, and UV and blue light emitting devices. 11,17,18 Despite the extensive research and the achieved progress, the integration of ZnO nanowires as a complete optoelectronic device is still a challenge. In the past decade some important advances have been made in this direction.…”

Section: Introductionmentioning

confidence: 99%

ZnO UV photodetector with controllable quality factor and photosensitivity

et al. 2013

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ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the relative photosensitivity and quality factor (Q factor) of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM) down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence

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“…These results were found to be in agreement with the studies carried out earlier. 38,39 The NBE emission is ascribed to the recombination of electrons at the bottom of the conduction band with holes at the top of the valance band within the active ZnO film. The green emission peak centered at 520-538 nm can be attributed to the electron-hole recombination from the V O to the valance band (VB) (E Vo − E VB = 2.38 − 2.53 eV) or the recombination from Zn i to V O energy level.…”

Section: Resultsmentioning

confidence: 99%

Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

et al. 2013

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In this study, n-ZnO thin films were electrochemically deposited on p-GaAs:Zn substrates. The XRD results of ZnO thin films deposited on p-GaAs:Zn substrates at potentials varied from −0.9 V to −1.2 V show a strong c-axis (002) orientation and homogeneity. The current-voltage characteristics exhibit rectification, proving a low turn-on voltage and an ideality factor of 4.71. The n-ZnO/p-GaAs heterostructures show blue-white electroluminescence (EL) emission, which is composed of broad emission bands. In addition to these broad peaks, stimulated emission also appear on the top of the spectra due to the multiple reflections from the mirror like surfaces of ZnO-ZnO and ZnO-GaAs interfaces. Besides, three broad photoluminescence (PL) emission peaks have also been observed peaking at respectively around 3.36 eV, 3.28 eV and 3.07 eV generally attributed to the near bandedge emission, the residual donor level and deep level emission due to the localized defects, respectively. C 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes

Cited by 214 publications

References 34 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

ZnO UV photodetector with controllable quality factor and photosensitivity

Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

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