Ordered nucleation of Ge islands along high index planes on Si

Vescan, L.; Grimm, K.N.; Goryll, Michael; Holländer, B.

doi:10.1016/s0921-5107(99)00297-4

Cited by 33 publications

(22 citation statements)

References 21 publications

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“…The general observation is that island distribution and island density depend on growth parameters such as temperature, total coverage, growth rate and time, chemical species, faceted substrates, etc. [8][9][10][14][15][16][17][18][19][20][21][22][23][24] All of these parameters influence the surface migration and implicitly the island formation.…”

Section: D Island Growth Detailsmentioning

confidence: 99%

“…It was recently shown that the nucleation of islands on Si͑001͒ is influenced by the presence of other crystallographic planes. 9,10 If the mesa size is of the order of the diffusion length of Ge adatoms and if the total coverage is kept below a certain value, then islands nucleate only along mesa edges on ͕1 0 12͖ facets without nucleation on the ͑001͒ plane. A surface diffusion length of Ge of the order of 100 m at 700°C was evaluated.…”

Section: Introductionmentioning

confidence: 99%

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Size distribution and electroluminescence of self-assembled Ge dots

Vescan

Stoïca

Chretien

et al. 2000

Journal of Applied Physics

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In this article we study the electroluminescence of p-i-n diode structures with Ge dots consisting of coherent three-dimensional small ͑pyramids͒ and larger ͑dome͒ islands. The Ge dots are formed through strain-induced islanding. The diode structures, including one layer with Ge dots, were deposited on Si mesas with variable areas in order to study the influence of limited area deposition on self-assembling. It was observed that the reduction of deposited area improves island uniformity. The combined analysis of island distribution and electroluminescence spectra has lead to the conclusion that domes in small diodes have a smaller Si content or are less relaxed than domes in larger diodes. The diodes are found to emit up to room temperature near the optical communication wavelength of 1.3 microns.

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Section: D Island Growth Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Size distribution and electroluminescence of self-assembled Ge dots

Vescan

Stoïca

Chretien

et al. 2000

Journal of Applied Physics

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“…This result implies that the density of ordered islands is constant, as previously reported for Ge deposition on patterned Si͑001͒ mesas. 25 Thus, we expect that few rows of islands should form depending on the terrace width. This is strikingly apparent in Fig.…”

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confidence: 99%

Self-ordering of Ge islands on step-bunched Si(111) surfaces

Sgarlata

Szkutnik

Balzarotti

et al. 2003

Applied Physics Letters

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“…The features of the 18-s-sample (Fig.4 (a)) suggest that in a 65-nm-thick spacer layer the stress modulation at the surface is intense enough to determine the nucleation and evolution of small pyramids in the strained regions only. The absence of nucleation outside the cluster regions implies that the mean separation between adjacent strain energy wells is smaller than the Ge adatom mean diffusion length [26 ]. Furthermore, the islands first nucleate and develop at the center of the stressed region.…”

Section: Fig 4 2×2 µMmentioning

confidence: 99%

Spontaneous ordering of self‐assembled‐Ge island

Seta¹,

Capellini

Evangelisti

2005

Cryst. Res. Technol.

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Self-assembled quantum dots can be the building blocks of a variety of mesoscopic devices. However, in order to use these structures in large-scale integrated devices, accurate control over their spatial positioning is required. We show here that, by a suitable engineering of the deposition process, it is possible to obtain self-organization resulting in well ordered clusters composed of regularly disposed nano-sized islands. Elastically relaxed Ge islands act as a stressor for a Si layer subsequently deposited (Ge has a 4 % larger lattice cell). This effect results in a modulation of the lattice parameter and strain field in the Si over-layer. In particular the Si lattice in the columnar region on top of the buried islands is tensile strained and will act as preferential nucleation site for the subsequent Ge island growth. We have generated a square array of tensile-strained regions oriented along the [010]-[100] directions on the Si(001) surface exploiting the self-ordering occurring in the growth at 750 degrees C of Ge island multi-layers used as a template. The strain field intensity and shape was modified by changing the thickness of the template Si over-layer: the thicker the overlayer the wider and less intense the strain field in the Si tensile regions. On this template we have grown a Ge island layer at the lower temperature of 600 degrees C. At this growth temperature the islands are much smaller than the lateral extension of the strain field on the Si surface of the template and the nucleation and evolution of several islands inside a single tensile-strained regions is promoted. Upon decreasing the template Si over-layer thickness from 200 to 35 nm the Ge island spatial distribution changes from random to a well-ordered square lattice of multi-island clusters. At intermediate Si over-layer thickness (65 nm), the Ge islands are confined in cluster regions only at the first stage of their evolution (pyramids), while for thinner over-layer (35 nm) islands are assembled in clusters up to the last stage their growth dynamics (relaxed domes). The strong dome-to-dome interaction within a cluster, due to their small mutual separation, has impact also on the dome size by reducing their mean base width of about 35%. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Ordered nucleation of Ge islands along high index planes on Si

Cited by 33 publications

References 21 publications

Size distribution and electroluminescence of self-assembled Ge dots

Size distribution and electroluminescence of self-assembled Ge dots

Self-ordering of Ge islands on step-bunched Si(111) surfaces

Spontaneous ordering of self‐assembled‐Ge island

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