Ordered silicon nanostructures by ion beam induced glancing angle deposition

Abstract

Wet etching silicon nanofins with (111)-oriented sidewalls J. Vac. Sci. Technol. B 31, 021801 (2013) Nanoscale optical critical dimension measurement of a contact hole using deep ultraviolet spectroscopic ellipsometry J. Vac. Sci. Technol. B 31, 011803 (2013) Reorganization of graphite surfaces into carbon micro-and nanoparticles under high flux hydrogen plasma bombardment J. Vac. Sci. Technol. A 31, 011303 (2013) Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature J. Vac. Sci. Technol. B 30, 051201 (2012) Maskless fabrication of selectively sized silicon nanostructures for solar cell application Various silicon nanostructures ͑twofold chevrons and three-and fourfold spirals͒ were grown on silicon ͓111͔ substrates prepatterned with a two-dimensional square lattice of blocks with different block size and periodicity via ion beam induced glancing angle deposition at room temperature, in combination with a controlled substrate rotation. Top view and cross-section scanning electron microscopy pictures reveal that form, size, and periodicity of the structures are strongly dependent on the size and periodicity of the seeding space and differ widely from structures grown on plain substrates. It is shown that the growth of periodically arranged nanostructures, which is important for many possible applications, including photonic crystals, on prepatterned substrates is only possible if the periodicity of the seeding spaces matches the natural lateral dimensions of the structures grown on bare substrates.

Arbitrarily shaped Si nanostructures by glancing angle ion beam sputter deposition

“…This r-dependent morphological change is linked to the growth front of the structures ''following'' the particle flux under glancing angle conditions and low adatom mobility. As most of the incoming particles stick to where they land, i.e., the tops of the growing structures, a continuous change of the particle flux direction thus leads to the growth of helical structures like spirals and screws [1,38].…”

“…The temperature-driven morphological changes for slow and intermediate substrate rotation as described here can be understood considering the effects of surface diffusion, as also explained in a previous work [38].…”

“…As already discussed in a previous publication [38], if the effect of enhanced T S on the morphological www.pss-b.com evolution of glancing angle deposited, columnar Si nanostructures (i.e., deposited with sufficiently fast substrate rotation) is evaluated, merging and densification are fostered with increasing T S and therefore increasing the adatomdiffusion lengths. Similar experiments as described in the previous subsection, except for r which was set to r ¼ 17 nm=rev led to the growth of vertical Si columns.…”

Sub‐Wavelength Antireflection Coatings From Nanostructure Sculptured Thin Films

“…Thereby atomic shadowing supports three-dimensional nanostructure growth [3,4]. A computer controlled azimuth substrate rotation is used to adjust the nanostructure morphologies, which can take shapes such as posts, spirals or chevrons, for example [5,6]. The substrate tilt specifies the shadowing condition during film growth and determines the film density and the nanostructure width.…”

Silicon Nanocolumns on Nanosphere Lithography Templated Substrates: Effects of Sphere Size and Substrate Temperature

“…The Si nanocolumns were grown in a stainless steel load-locked vacuum system with a base pressure of approximately 3 0 × 10 −9 mbar. The experimental setup as described elsewhere 3 consists of an inductively coupled, high-frequency (13.56 MHz) ion source with a triple grid system of 40 mm in diameter. Ar + -ions with an energy of 1100 eV were extracted out of the source to sputter the surface of a sintered polycrystalline Si disc (99.99% pure, positioned 15 cm in front of the ion source) at an angle of Target = 65 to the target normal.…”