“…In semiconductor nanowires, the thermal conductivity k can be greatly reduced due to severe phonon scattering on the interfaces and boundaries of the nanowires, meanwhile, the power factor S 2 /ρ can be enhanced inherently by creating sharp features in electronic density of state [12], thus resulting in a much higher ZT value. Among various thermoelectric nanowires including Si [14][15][16][17][18][19][20][21], Ge [22], Bi [23], SiGe [24,25], InAs [26], BiTe [27,28] and PbTe [29,30] nanowires, Si nanowire (SiNW) is one of the mostly investigated TE structure due to its nontoxicity, comparatively easy synthesis, good stability under high temperature, abundant Si resource and ideal interface compatibility with Si-based electronic device. So far, there are many different types of SiNWs especially the individual one were investigated.…”