2014
DOI: 10.1016/j.nanoen.2013.07.009
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Ordered structure and high thermoelectric properties of Bi2(Te,Se)3 nanowire array

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Cited by 62 publications
(37 citation statements)
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“…Our previous results show that the hierarchical Sb 2 Te 3 pillar array structure can selectively scatter phonon more than carrier, leading to a high ZT value 15 . In addition, we also find that unique nanowire array structuring can induce a change of the Fermi level of the Bi 2 (Te,Se) 3 and favorably influence the phonon and carrier transport, thus dramatically enhancing a ZT result 16 . The previous studies have witnessed the feasibility of controlling novel microstructures to modify TE properties of Sb 2 Te 3 and Bi 2 Te 3 -based alloys.…”
Section: Introductionmentioning
confidence: 71%
“…Our previous results show that the hierarchical Sb 2 Te 3 pillar array structure can selectively scatter phonon more than carrier, leading to a high ZT value 15 . In addition, we also find that unique nanowire array structuring can induce a change of the Fermi level of the Bi 2 (Te,Se) 3 and favorably influence the phonon and carrier transport, thus dramatically enhancing a ZT result 16 . The previous studies have witnessed the feasibility of controlling novel microstructures to modify TE properties of Sb 2 Te 3 and Bi 2 Te 3 -based alloys.…”
Section: Introductionmentioning
confidence: 71%
“…In semiconductor nanowires, the thermal conductivity k can be greatly reduced due to severe phonon scattering on the interfaces and boundaries of the nanowires, meanwhile, the power factor S 2 /ρ can be enhanced inherently by creating sharp features in electronic density of state [12], thus resulting in a much higher ZT value. Among various thermoelectric nanowires including Si [14][15][16][17][18][19][20][21], Ge [22], Bi [23], SiGe [24,25], InAs [26], BiTe [27,28] and PbTe [29,30] nanowires, Si nanowire (SiNW) is one of the mostly investigated TE structure due to its nontoxicity, comparatively easy synthesis, good stability under high temperature, abundant Si resource and ideal interface compatibility with Si-based electronic device. So far, there are many different types of SiNWs especially the individual one were investigated.…”
Section: Introductionmentioning
confidence: 99%
“…However, the ZT value for bulk Bi 2 Te 3 or ternary alloys is still around 1.0. Recently, a lot of studies have been conducted on the nanostructured Bi 2 Te 3 [3][4][5][6][7], like Bi 2 Te 3 nanowires. It has been proven that low dimension structures could significantly enhance thermoelectric properties [8].…”
Section: Introductionmentioning
confidence: 99%