Ordered Structure in the Thermal Oxide Layer on Silicon Substrates

Shimura, Takaaki; Mishima, Eiji; Watanabe, Hidehiro; Yasutake, Kiyoshi; Tatsumura, K.; Watanabe, T.; Ohdomari, Iwao; Yamada, Kenji; Kamiyama, Satoshi; Akasaka, Y.; Nara, Yasuo; Nakamura, Kei

doi:10.1149/ma2005-02/19/727

Cited by 3 publications

(4 citation statements)

References 3 publications

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“…The concept behind our method is based on two results obtained in previous studies by us into the residual order in thermal oxide layers on Si substrates (2-4). One of these results is that although the SiO 2 structures in the thermal oxide of Si have been classified as being amorphous in conventional characterizations, they actually possess residual order from the diamond structure in their parent Si crystals (2,3). An extra diffraction peak due to this residual order is observed on the lower angle side of the crystal truncation rod (CTR) scattering around the 111 Bragg point of the Si substrate in X-ray diffraction patterns (Fig.…”

Section: Experimental Methodsmentioning

confidence: 99%

Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices

Shimura¹,

Inoue²,

Okamoto³

et al. 2008

ECS Trans.

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We demonstrate two topics of the application of synchrotron X-ray diffraction methods to thin films used in gate stack structures. One is related to the structural change in the interfacial SiO 2 layer between the high-k dielectric layer and the Si substrate. It is shown that O 2 molecules dissociate into O atoms during diffusion through the HfO 2 layer and these O atoms destroy the ordered SiO 2 in the interfacial layer. The other is the characterization of strained Si wafers using a synchrotron X-ray microbeam diffraction and topography. The nonuniformity in micro-and centimeter scales is shown for the SiGe layer of the strained Si wafers.

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Section: Experimental Methodsmentioning

confidence: 99%

Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices

Shimura¹,

Inoue²,

Okamoto³

et al. 2008

ECS Trans.

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show abstract

“…However, the intensity of the peak is too weak to have been diffracted from the entire volume of oxide layer. Therefore, we have proposed a structural model in which the oxide layer has long-range order as the averaged structure, but the atoms are significantly displaced from the averaged positions (6,14). In this case, the intensity of the diffraction peak is dependent on the displacements of atoms, while the width of the peak remains sharp.…”

Section: Quasi-amorphous Structurementioning

confidence: 99%

“…We have proposed a structural model for the thermal oxide based on the results of synchrotron x-ray diffraction studies, in which the oxide layer has an ordered structure originating from the diamond structure of the parent Si crystal, not only close to the SiO 2 /Si interface, but also over the entire oxide layer (2)(3)(4)(5)(6). The present study focused on the thermal stability and the effect of electron irradiation, together with the fundamentals of the structural model.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron X-ray Diffraction Studies of Thermal Oxidation of Si and SiGe

Shimura¹,

Okamoto²,

Shimokawa³

et al. 2009

ECS Trans.

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“…It is important to investigate the atomic structure of the thermally oxidized layer, because it allows us to understand what occurs at the oxidized interface. For a thermally oxidized layer of Si, the order of the Si atoms in the oxide layer (which originates from the diamond structure of the parent Si crystal) is preserved, although the structure appears to be amorphous (9,10). This order provides a clear picture of the oxidation process and explains the nearly perfect electrical properties of the SiO 2 /Si interface.…”

Section: Introductionmentioning

confidence: 99%