Ordering and Magnetic Susceptibility of Non-Stoichiometric Hafnium Carbide

Gusev, A. I.; Zyryanova, A. N.

doi:10.1002/(sici)1521-396x(200002)177:2<419::aid-pssa419>3.0.co;2-j

Cited by 23 publications

(11 citation statements)

References 18 publications

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“…The cell parameters of HfC in B16, B16II, and B18 were 0.4635(0), 0.4638(2), and 0.4638(3) nm, respectively. All these values were lower than those reported for HfC by Cotter et al (0.4641 nm), 14 Gusev et al (0.46408 nm), 1 and JCPDS card No. 65‐2906 (0.4640 nm) 21…”

Section: Resultscontrasting

confidence: 60%

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Synthesis of Ultra‐Fine Hafnium Carbide Powder and its Pressureless Sintering

Liu

Kan

Zhang

2010

Journal of the American Ceramic Society

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Ultra‐fine HfC powders with particle sizes of 380 or 225 nm were synthesized by carbothermal reduction of HfO2 with graphite or carbon black, respectively. The investigation of the process indicated that a vacuum level as high as 5 Pa was appropriate for decreasing the reaction temperature and consequently limiting the particle growth of HfO2 reactant. Type and size distribution of carbon sources demonstrated an obvious effect on the particle size of the HfC powders obtained. A model was proposed to explain this phenomenon. Carbon black with a characteristic particle size of 42 nm resulted in a HfC powder with a median particle size of 225 nm. Compared with the reported values in the literature, the synthesized HfC powder exhibited better sinterability than the commercial HfC powder. Using the synthesized powder, monolithic HfC ceramics pressureless sintered at 2400°C reached a relative density of 98.4% and an average grain size of about 4 μm.

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Section: Resultscontrasting

confidence: 60%

“…H afnium carbide (HfC) has a face‐centered cubic NaCl crystal structure and possesses a wide homogeneity region from HfC 0.59 to HfC 1.0 1 . It has very high melting point (3950°±40°C), low vapor pressure, low electrical resistivity (∼37–45 μΩ·cm), and high chemical stability.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Ultra‐Fine Hafnium Carbide Powder and its Pressureless Sintering

Liu

Kan

Zhang

2010

Journal of the American Ceramic Society

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“…The only phase in the powder heated to 2000°C was ZrC x with all of the peaks indexed to ICDD PDF card 35-0784. While XRD was able to identify the formation of ZrC x, it was not able to provide information about carbon-site occupancy or carbon stoichiometry due to the low x-ray scattering cross section of carbon (6), nitrogen (7), and oxygen (8) compared to zirconium (40).…”

Section: Resultsmentioning

confidence: 99%

“…Experimental phase diagrams for the Zr–C show that ZrC x is stable for x values ranging from 0.63 to 0.98 . Similarly, variable carbon stoichiometry is exhibited by other TMCs, such as TiC x , HfC x , VC x , NbC x , TaC x , and WC x . Carbon stoichiometry affects the sinterability, mechanical properties, electrical properties, and radiation resistance of ZrC x ceramics.…”

Section: Introductionmentioning

confidence: 98%

Carbon vacancy ordering in zirconium carbide powder

et al. 2019

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Ordered carbon vacancies were detected in zirconium carbide (ZrCx) powders that were synthesized by direct reaction. Zirconium hydride (ZrH2) and carbon black were used as starting powders with the molar ratio of ZrH2:C = 1:0.6. Powders were reacted at 1300°C or 2000°C. The major phase detected by x‐ray diffraction (XRD) was ZrCx. No excess carbon was observed by transmission electron microscopy (TEM) in powders synthesized at either temperature. Ordering of the carbon vacancies was identified by neutron powder diffraction (NPD) and further supported by selected area electron diffraction (SAED). The vacancies in carbon‐deficient ZrCx exhibited diamond cubic symmetry with a supercell that consisted of eight (2 × 2 × 2) ZrCx unit cells with the rock‐salt structure. Rietveld refinement of the neutron diffraction patterns revealed that the synthesis temperature did not have a significant effect on the degree of vacancy ordering in ZrCx powders. Direct synthesis of ZrC0.6 resulted in the partial ordering of carbon vacancies without the need for extended isothermal annealing as reported in previous experimental studies.

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“…Therefore, HfC has been researched extensively as promising anti-oxidative coatings at high temperature, and on the other side it also has been investigated as hard protective films. Moreover, many techniques have been used for preparation of HfC films such as chemical vapor deposition [19,21,22], reactive melt infiltration [18], solid-phase sintering [23], electron beam deposition [17], pulsed laser ablation [16,24], magnetron sputtering, etc. [25].…”

Section: Page 5 Of 37mentioning

confidence: 99%