Ordering-induced domains in sub-micron-sized Ba(Zn1/3Ta2/3)O3–BaZrO3 microwave ceramics

Liu, Fei; Cheng, Lan; Li, Hao; Liu, Shaojun

doi:10.1007/s10854-021-06341-3

Cited by 4 publications

(1 citation statement)

References 35 publications

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“…Relatively large concentrations of B-site vacancies change the stacking of ABO 3 layers to form a hexagonal perovskite structure, with vacancies being arranged in an orderly manner in the resulting coplanar octahedral layer. The stoichiometric changes induced by ZnO volatilization can promote the growth of ordered domains, increase the degree of cation ordering and c/a lattice distortion, and improve the dielectric loss characteristics of Ba(Zn 1/3 Ta 2/3 )O 3 (BZT) [2]. A helpful effect of cation deficiency on loss has been found in other 1:2 composite perovskites, such as BaMg 1/3 Ta 2/3 O 3 (BMT) and BaMg 1/3 Nb 2/3 O 3 (BMN).…”

Section: Introductionmentioning

confidence: 99%

Effects of Replacing Co2+ with Zn2+ on the Dielectric Properties of Ba [Zn1/3(Nb1/2Ta1/2)2/3]O3 Ceramics with High Dielectric Constant and High Quality Factor

Chen,

Fan,

Chang

et al. 2024

Ceramics

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In this study, we used solid-state synthesis to prepare Ba[(ZnxCo1−x)1/3(Nb0.5Ta0.5)2/3]O3 microwave ceramics for mobile communications. Compared with Ba[Zn1/3(Nb0.5Ta0.5)2/3]O3, in the prepared materials, Co2+ substitution with Zn2+ improved the Q × f value and enabled densification and sintering at a lower temperature. We used X-ray diffraction (XRD) and scanning electron microscopy (SEM) to analyze the obtained microstructure. Ba[(ZnxCo1−x)1/3(Nb0.5Ta0.5)2/3]O3 was found to have a 1:2 ordered hexagonal structure, and its Q × f value increased with the increase in sintering temperature. In this work, excellent microwave dielectric properties—τf = −0.7 ppm/°C, εr = 34.5, and Q × f = 110,000 GHz—were obtained by sintering Ba[(Zn0.3Co0.7)1/3(Nb0.5Ta0.5)2/3]O3 at 1400 °C for 5 h.

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Section: Introductionmentioning

confidence: 99%