Ordering induced splitting of light-hole and heavy-hole bands in GaInP grown by organometallic vapor-phase epitaxy

Abstract

The origin of the polarization of the photoluminescence in ordered InGaP is investigated. The ordering induced lowering of the cubic crystal symmetry is caused by a superlattice and/or strain effects in two of the four 〈111〉 crystal directions resulting in a splitting of the heavy-hole and light-hole valence bands. Using simple arguments from k⋅p theory, the difference in photon energy as well as the intensity ratio of the luminescence in the two polarization directions along the cleavage facets is explained as a function of temperature.

An experimental and theoretical study on the temperature dependence of GaAs solar cells

“…To analyze the influence of temperature on the absorption coefficient of GaInP ellipsometry measurements were carried out in a temperature range from 298 K to 373 K. A significant change was observed around the bandgap. The shift in the bandgap range being in accordance with the bandgap model of Varshni and t'Hooft et al [18,21]. In order to enable an analysis of the influence of the bandgap change the shift of the absorption coefficient was extrapolated up to 398 K and down to 203 K.…”

“…The temperature dependence of the bandgap of GaAs and GaInP is modeled according to the equation proposed by Varshni [18] with parameters from Levinshtein et al [19,20] and t'Hooft et al [21]. It is assumed that the increase of the electron affinity with rising temperature corresponds to half of the bandgap increase.…”

Optical properties of colloidal InGaP∕ZnS core/shell nanocrystals

“…In contrast ⌰ D was reported to be 204 K for an epitaxially grown In 0.5 Ga 0.5 P sample. 16 The energy band gap as a function of temperature was also fitted by another empirical expression 17…”

Polarization‐angle dependence of photoluminescence intensity of ordered GaInP2 layers: observation of polarization memory

“…For the [100], [001] and [011] directions of PL emission our calculations give the same values for the transition matrix elements as that obtained in Ref. 5. Further, assuming parabolic bands and Boltzmann statistics, the emission intensity ratio, I θ , as a function of polarization angle θ was calculated.…”