Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light

Abstract

The device performances of pentacene-based organic thin film transistors (OTFTs) were greatly improved by irradiation of infrared light. The field effect mobility and maximum drain current increase from 0.20±0.01 to 0.57±0.02 cm2/V s and 1.14×10−5 to 4.91×10−5 A, respectively. The (001) peak of the pentacene “thin film” phase increases in intensity by 4.5 times after infrared irradiation at 50 W for 2 h. Two types of crystal orientations, i.e., “crystal I” (2θ=5.91°) and “crystal II” (2θ=5.84°), coexist in the pentacene. The improvement of the characteristics of OTFTs is attributed to crystallization and crystal reorientation induced by infrared light.

Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic properties

“…At the same time, they proposed that the organic based materials can be used as an active sensing layer in real applications such as sensors. [8][9][10][11][12][13] Furthermore, studies related to the change in electronic and structural properties with respect to dose are essential for radiation sensor applications.…”

Enhanced thermoelectric performance by resonant vibrational mode-selective density-of-states distortions

“…The challenge, however, remains that in order to realize such enhancement of the thermoelectric PF, intramolecular vibrations with larger energies (and therefore larger peak spacings) would have to be considered. Nevertheless, since coupling valence carriers in weakly-bonded materials to higher energy intramolecular vibration modes (h o 0 4 2J B 3000 K) can under certain conditions oxidize the material, 20,42,77 break bonds, 78,79 or mix vibrational modes, [80][81][82][83] additional strategies to mitigate these possibilities may need to be implemented to take advantage of these DOS distortions for high-temperature TE applications.…”