Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10 nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control

Zhang, Hui; Hosaka, Sumio; Yin, You

doi:10.1063/1.4867981

Cited by 4 publications

(6 citation statements)

References 30 publications

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“…The guide line height influences on the PS-PDMS thickness in the guide lines gap. It was clear that the PS-PDMS dot arrays formation began to be created in a region of more than 15 nm in the HSQ resist thickness for the guide lines [16]. Here, we set constant thickness of the coated HQS resist to about 25 nm in the EB drawing.…”

Section: Resultsmentioning

confidence: 99%

“…Here, we set constant thickness of the coated HQS resist to about 25 nm in the EB drawing. Furthermore, we used high resolution EB drawing with salty developer for HSQ resist to get steep side wall of the guide line [12], [16].…”

Section: Resultsmentioning

confidence: 99%

“…When we use light PS-PDMS, for example, about 8.5 kg/mol. [16], we can consider to get half-pitch of 5 nm, which will be required in ITRS in 2029 [14].…”

Section: Resultsmentioning

confidence: 99%

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Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

et al. 2021

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We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordered the sphere type PS-PDMS by controlling a thickness of the PS-PDMS along improved guide lines to form the line and space pattern. We obtained the thickness dependence on the pattern change such as nano-dot arrays and nano-line & space patterns. When the thickness increased to about +4 nm from the upper thickness for formation of the dot arrays, the line & space patterns have been formed with about 7 nm in line width and 14 nm in pitch.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

et al. 2021

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“…Nanowires were fabricated on the prepared substrate by direct-write electron beam (EB) writing (Figure c,d). The EB writing system is a combination of a high-resolution scanning electron microscope (SEM) with a Schottky emission-type field-emission electron gun (JSM6500F, JEOL) and a drawing controller (Beam Draw, Tokyo Technology) . To form narrow nanowires with high-resolution, negative-tone resist hydrogen silsesquioxane (HSQ, Dow Corning) and a high-contrast salty development solution , were employed.…”

Section: Methodsmentioning

confidence: 99%

“…The EB writing system is a combination of a highresolution scanning electron microscope (SEM) with a Schottky emission-type field-emission electron gun (JSM6500F, JEOL) and a drawing controller (Beam Draw, Tokyo Technology). 40 To form narrow nanowires with high-resolution, negative-tone resist hydrogen silsesquioxane (HSQ, Dow Corning) and a high-contrast salty development solution 41,42 were employed. Normally, a thin HSQ resist layer would be employed to form a high-resolution pattern because the EB scattering range (lateral) in a thin resist layer is smaller than that in a thick resist layer.…”

Section: Methodsmentioning

confidence: 99%

Design and Fabrication of Silicon Nanowire-Based Biosensors with Integration of Critical Factors: Toward Ultrasensitive Specific Detection of Biomolecules

Zhang

Kikuchi

Ohshima

et al. 2020

ACS Appl. Mater. Interfaces

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As critical factors affecting the sensing performance of silicon nanowire (SiNW) biosensors, the structure, functional interface, and detection target were analyzed and designed to improve sensing performance. For an improved understanding of the dependence of sensor structure on sensitivity, a simple theoretical analysis was proposed to predict the sensitivity of biosensors with different SiNW types, widths, and doping concentrations. Based on the theoretical analysis, a biosensor integrating optimized critical factors was designed and fabricated. Optimizations focusing on the following aspects are considered: (1) employing n-type SiNW and controlling the impurity doping concentration of SiNW at approximately 2 × 1016–6 × 1016 atoms/cm3 to obtain a suitable charge density, (2) minimizing the SiNW width to 16.0 nm to increase the surface area-to-volume ratio, (3) using a native oxide layer on SiNW as a gate insulator to transport the captured charge molecules closer to the SiNW surface, (4) modifying the SiNW surface by 2-aminoethylphosphonic acid coupling to form a high-density self-assembled monolayer for enhancing the stability bound molecules, and (5) functionalizing the SiNW with ovalbumin molecules for specifically capturing the target immunoglobulin G (IgG) molecules. The sensing performance was evaluated by detecting IgG with concentrations ranging from 6 aM to 600 nM and control experiments. The SiNW biosensor revealed ultrahigh sensitivity and specific detection of target IgG with a measured limit of detection of 6 aM. The integration of the critical SiNW biosensor factors provides a significant possibility of a rapid and ultrasensitive diagnosis of diseases at their early stages.

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Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Yin

Wang

2015

IEEE Trans. Electron Devices

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Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10 nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control

Cited by 4 publications

References 30 publications

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

Design and Fabrication of Silicon Nanowire-Based Biosensors with Integration of Critical Factors: Toward Ultrasensitive Specific Detection of Biomolecules

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

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