Ordering, positioning and uniformity of quantum dot arrays

Lan, Hongbo; Ding, Yucheng

doi:10.1016/j.nantod.2012.02.006

Cited by 67 publications

(47 citation statements)

References 80 publications

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“…For instance, antidot structures can already be synthesized with high precision 26 . So it is conceivable to realize dot or antidot lattices which have the discrete translational invariance we are considering here.…”

Section: Possible Realizationsmentioning

confidence: 99%

Tunable and direction-dependent group velocities in topologically protected edge states

Uhrig

2016

Phys. Rev. B

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Topological effects continue to fascinate physicists since more than three decades. One of their main applications are high-precision measurements of the resistivity. We propose to make also use of the spatially separated edge states. It is possible to realize strongly direction-dependent group velocities. They can also be tuned over orders of magnitude so that robust and tunable delay lines and interference devices are within reach.

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Section: Possible Realizationsmentioning

confidence: 99%

Tunable and direction-dependent group velocities in topologically protected edge states

Uhrig

2016

Phys. Rev. B

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“…One limiting feature of the self-assembled process is the lack of control of the location of the nanostructures. In this sense, the growth of InAs QDs on patterned substrates has emerged as a powerful strategy, 3 being currently a research topic of increasing interest. Nanoholes patterned on a flat substrate surface define preferential InAs nucleation positions, which are associated with local minimums of the surface chemical potential at the bottom of each nanohole.…”

Section: Introductionmentioning

confidence: 99%

Study of Growth Parameters for Single InAs QD Formation on GaAs(001) Patterned Substrates by Local Oxidation Lithography

Herranz

González

Wewior

et al. 2014

Crystal Growth & Design

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This work studies the selective nucleation of InAs within nanoholes on GaAs(001) substrates patterned by atomic force microscopy local oxidation. The effects of substrate temperature and As 4 overpressure during InAs deposition directly on the patterned substrate (without a GaAs buffer layer) are considered. It is found that when InAs is deposited at substrate temperature of 510°C under low As 4 overpressure, a single InAs quantum dot per nanohole is obtained for a broad range of sizes of pattern motifs. The use of these InAs quantum dots as seed nuclei for vertical stacking of optically active single InAs site-controlled quantum dots is investigated.

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“…Many of the details regarding the optimization for small size dispersion are referenced in the review by Lan and Ding [103]. Much effort in this system has been spent in achieving size uniformity and control beyond what, for example, kinetics scaling will yield.…”

Section: Iii-v Systemsmentioning

confidence: 99%