Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

Abstract

The electrical and memory behavior of organic bistable memory devices in the form of metal-embedded insulator-metal (MIM) structure are described. The devices utilize layer-by-layer (LbL) deposited single walled carbon nanotubes (SWCNTs) as charge traps embedded between two polymethylmethacrylate (PMMA) insulating layers. The stack was sandwiched between two aluminium electrodes to form an Al/PMMA/SWCNTs/PMMA/Al structure. The current-voltage (I-V) characteristics of the devices exhibit electrical bistability and non-volatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states. The different conductive states were programmed by application of a positive and negative voltage pulse for the ON and OFF states, respectively. A maximum ON/OFF ratio of 2 × 105 is achieved at low reading voltage of 1 V. Space-charge-limited-current (SCLC) conduction model was used to describe the carriers transport and the electrical bistability in the devices, which was attributed to the trapping and detrapping of electrons inside the SWCNTs.

Preparation of Weavable, All‐Carbon Fibers for Non‐Volatile Memory Devices

“…At the voltage below 0.8 V in the initial OFF state, the I – V curves exhibited a linear Ohmic behavior with a slope of 1.02, which is consistent with the literature values 32. 33 As the voltage exceeding 0.8 V, the fitting line has a slope of 2.94 (greater than 2), thus trap‐limited space‐charge‐limited‐current (SCLC) dominates the carrier transport process,34 with charge trapping on the surface defects and structural disorder of GO induced by oxidation 35. 36 With a further increase of the bias, the oxygen migration in the GO coating layer could generate resistive switching of the MWCNT@GO fiber‐based cell 31.…”

Optically and electrically tunable graphene quantum dot–polyaniline composite films

“…Berzina et al [12] synthesized gold nanoparticles/PANI composite materials by the polymerization of anilinium, and this resulted in the formation of Schottky barriers between PANI and gold particles. The bistable electrical conductivity of the composites with onedimensional nanostructures and organic materials has been reported [13][14][15]. The mechanisms of electrical bistability and 45 memory effect are dependent on the material system [16][17][18][19].…”

Role of Hydroxyl on Conductivity Switching of Poly(ethylene oxide)/TiO2 Electrical Bistable Devices

“…The polymer/nanoparticle (NP) electrical bistable devices are considered as promising candidates for the next‐generation memory chip due to low cost, simple‐fabrication process, and high mechanical flexibility . Among the related polymers, insulating polymers, including poly(methyl methacrylate) (PMMA), poly(ethylene oxide) (PEO), polyvinylpyrrolidone (PVP), etc., are receiving more and more attention because of their unique characteristics, such as larger bandgap, better chemical/thermal stability, and lower cost. Along with these polymers, various types of NPs (Ag 2 S, CdSe, ZnS, ZnO, and TiO 2 ) have been used to fabricate electrical bistable devices, and a great deal of progress has been made.…”