Organic bistable memory devices based on MoO₃ nanoparticle embedded Alq₃ structures

Abstract

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO) between two tris-(8-hydroxyquinoline)aluminum (Alq) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO layer thickness and its location in the Alq matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Growth, characterization and performance of bulk and nanoengineered molybdenum oxides for electrochemical energy storage and conversion

“…Due to their chromogenic, catalytic properties and ability to host foreign ions, MoO3 thin films have been applied in electrochromic display devices (see [141] and Refs. therein), optical memory devices [142], gas sensors [17], and lithium microbatteries [143][144][145][146]. Currently, there are several approaches available for preparing MoO3 films with either an amorphous or a polycrystalline structure using physical vapor deposition (PVD) and metal organic chemical vapor deposition (MOCVD) [147] are also used to fabricate MoO3 in thin film forms.…”

To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

“…Some interesting observation can be followed through from Table 2 , like the observation made by Reddy et al. [ 49,51,78 ] and by Busby et al. [ 48 ] in regards to the effect of rate of evaporation on the device behavior.…”

“…Interestingly, Reddy et al. 's [ 49,51,78 ] devices exhibit charge storage switching mechanism, while Busby et al. [ 48 ] reports the observation of filamentary conduction.…”

Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

“…The distribution and concentration of additives in the blend memory material has a signicant inuence on the reversibility or volatility of the lm resistor. 16 To date, inorganic nanomaterials, including metal NPs, 17,18 metal oxide NPs, 19,20 suldes, 21,22 and carbon materials, [23][24][25] have been widely investigated as a active layers of RRAM. Among these inorganic nanoparticles, n-type semiconductor ZnO NPs have attracted extensive attention due to their wide band gap (3.37 eV), strong electron mobility ($120 cm 2 V s À1 ), high excitation binding energy (60 meV), high melting point, excellent chemical stability, and good charge carrier transport performance.…”