Organic Electronics

Klauk, Hagen

doi:10.1002/9781119869610.ch6

Cited by 2 publications

(2 citation statements)

References 83 publications

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“…While a detailed investigation is currently in progress and beyond the scope of the present article, we expect charge trapping localized at the dielectric interface and the different charge transport and injection regimes to be relevant phenomena . Generally, in devices with metal oxide and hybrid dielectric, field-effect transistors behavior might be affected by (a) charges injected from the gate into the dielectric, and consequently trapped inside the dielectric, (b) residual dipoles in the bulk of the dielectric, which can possibly be reoriented by an external field, and (c) trapped carriers in the channel–dielectric interface often related to electrons trapped to hydroxyl groups (OH) at such an interface . While all three mechanisms can potentially contribute, the most dominant mechanism will determine the magnitude of hysteresis in the transistor with a certain bilayer dielectric.…”

Section: Resultsmentioning

confidence: 95%

Hafnium Aluminate–Polymer Bilayer Dielectrics for Organic Light-Emitting Transistors (OLETs)

Gallegos-Rosas,

Myllymäki,

Saarniheimo

et al. 2024

ACS Appl. Electron. Mater.

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Organic light-emitting transistors are thin-film transistors capable of generating and sensing light under appropriate bias conditions. Achieving a low-voltage operation while maintaining high efficiency can be obtained by using high-mobility semiconductors, highly efficient emissive layers, and high-capacitance dielectrics. We report on the fabrication, dielectric characterization, and implementation of (organic/inorganic) bilayer dielectric stacks in green organic light-emitting transistors. Our dielectric stack includes a nanoscale hafnium aluminate layer fabricated by atomic layer deposition and a thin layer of a polymer dielectric. We found that the hafnium aluminate layer is amorphous in nature and highly transparent in all the visible range. The bilayer stack showed around 10 times higher capacitance per unit area than our polymer reference dielectric. When used as a dielectric in organic light-emitting transistors, this stack enabled low leakage current and operation below 20 V, with a threshold around 6 V and similar efficiencies. Thus, engineering the dielectric layer can enable the tuning of the device working conditions and performances while keeping robustness and negligible leakage values. Thus, these findings open the way to use nanoscale organic/ inorganic bilayer dielectrics to enable low-bias, low-power consumption optoelectronic devices of relevance for next-generation electronics applications.

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Section: Resultsmentioning

confidence: 95%

Hafnium Aluminate–Polymer Bilayer Dielectrics for Organic Light-Emitting Transistors (OLETs)

Gallegos-Rosas,

Myllymäki,

Saarniheimo

et al. 2024

ACS Appl. Electron. Mater.

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“…Organic electronics is a rapidly growing field of interest which promises cost-effective and low-temperature device processing, even enabling the realization of flexible electronic devices. , A particular advantage of organic semiconductors and chromophores is the tailoring of their electronic properties through targeted synthesis instead of laborious band structure engineering necessary for inorganic semiconductors. However, device processing also requires lateral structuring and patterning of the semiconducting films, which remains challenging for molecular materials since photolithography is not applicable due to the radiation sensitivity and lack of chemical robustness in the etching process of these materials, causing their degradation .…”

Section: Introductionmentioning

confidence: 99%

F-Center-Mediated Growth of Patterned Organic Semiconductor Films on Alkali Halides

Günder

Diez‐Cabanes

Huttner

et al. 2022

ACS Appl. Mater. Interfaces

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Organic semiconductors combine flexible tailoring of their optoelectronic properties by synthetic means with strong light−matter coupling, which is advantageous for organic electronic device applications. Although spatially selective deposition has been demonstrated, lateral patterning of organic films with simultaneous control of molecular and crystalline orientation is lacking as traditional lithography is not applicable. Here, a new patterning approach based on surface-localized F-centers (halide vacancies) generated by electron irradiation of alkali halides is presented, which allows structural control of molecular adlayers. Combining optical and atomic force microscopy, X-ray diffraction, and density functional theory (DFT) calculations, it is shown that dinaphthothienothiophene (DNTT) molecules adopt an upright orientation on pristine KCl surfaces, while the F-centers stabilize a recumbent orientation, and that these orientations are maintained in thicker films. This specific nucleation results also in different crystallographic morphologies, namely, densely packed islands and jagged fibers, each epitaxially aligned on the KCl surface. Spatially selective surface irradiation can also be used to create patterns of F-centers and thus laterally patterned DNTT films, which can be further transferred to any (including elastomer) substrate due to the water solubility of the alkali halide growth templates.

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Organic Electronics

Cited by 2 publications

References 83 publications

Hafnium Aluminate–Polymer Bilayer Dielectrics for Organic Light-Emitting Transistors (OLETs)

Hafnium Aluminate–Polymer Bilayer Dielectrics for Organic Light-Emitting Transistors (OLETs)

F-Center-Mediated Growth of Patterned Organic Semiconductor Films on Alkali Halides

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