Organic Field-effect Transistors Based on Alkylphenyl-substituted Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophenes

Abstract

We investigated the characteristics of organic thin-film transistors based on alkylphenyl-substituted dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophenes (21DNTT) called 4,4′-nP-21DNTT and 6,6′-nP-21DNTT. We found that fieldeffect characteristics were strongly influenced by the position of the alkyl substituent on the 21DNTT core. An optimal field-effect mobility of 0.46 cm 2 V −1 s −1 was obtained for the 6,6′-8P-21DNTT-based transistor.

Fabrication of Organic Thin-Film Transistors Based on Bis(octylphenyl)chrysenes

“…The contact angles with water for SiO 2 , PS, and CYTOP are 20, 85 and 108, respectively. It is well known that hydrophobic insulators are beneficial for high-performance organic thin-film transistors because they can reduce the number of charge trapping states at the interface by covering the hydrophilic SiO 2 surfaces [18,19]. Among the OTFT devices, studied herein, the CYTOP-treated devices provided the best transistor performances.…”