2012
DOI: 10.1143/apex.5.061601
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Organic Field-Effect Transistors Based on Small-Molecule Organic Semiconductors Evaporated under Low Vacuum

Abstract: Basic small-molecule organic electron acceptors and donors such as dicyanoquinonediimine (DCNQI), tetracyanoquinodimethane (TCNQ), and tetramethyltetrathiafulvalene (TMTTF) do not smoothly form thin films by vacuum evaporation owing to the high vapor pressures. The thin films are, however, fabricated by low-vacuum evaporation, and the resulting organic thin-film transistors have exhibited remarkably improved performance.

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Cited by 22 publications
(22 citation statements)
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“…39 A small-molecule organic electron acceptor, DMDCNQI, forms air-stable n-channel transistors, 40,41 and recently, improved performance has been attained (μ = 0.23 cm 2 /Vs, on/off ratio = 2 × 10 6 , V T = 0 V) using the low vacuum evaporation method, though the threshold voltage is more susceptible to the surface treatment due to the trap states induced during the low vacuum evaporation. 42 In order to study the trap states, we have investigated the characteristics of these transistors in the temperature range between 260 K and 200 K. From the Arrhenius plot of the transconductance measured at low temperatures, we have studied gate voltage (V G ) dependence of the activation energy (E A ), and extracted the trap DOS from Lang's method, 33 as well as another method based on the E A vs. log V G plot. Furthermore, the T-dependent transistor characteristics is calculated inversely from the trap DOS.…”
Section: Introductionmentioning
confidence: 99%
“…39 A small-molecule organic electron acceptor, DMDCNQI, forms air-stable n-channel transistors, 40,41 and recently, improved performance has been attained (μ = 0.23 cm 2 /Vs, on/off ratio = 2 × 10 6 , V T = 0 V) using the low vacuum evaporation method, though the threshold voltage is more susceptible to the surface treatment due to the trap states induced during the low vacuum evaporation. 42 In order to study the trap states, we have investigated the characteristics of these transistors in the temperature range between 260 K and 200 K. From the Arrhenius plot of the transconductance measured at low temperatures, we have studied gate voltage (V G ) dependence of the activation energy (E A ), and extracted the trap DOS from Lang's method, 33 as well as another method based on the E A vs. log V G plot. Furthermore, the T-dependent transistor characteristics is calculated inversely from the trap DOS.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] For that purpose, a variety of p-channel and n-channel organic semiconductors have been studied and over the years a significantly improved performance has been obtained. [4][5][6][7][8][9][10][11][12] Thus, air-stable n-channel transistors exhibiting high electronic performance are rare in comparison with p-channel devices. [4][5][6][7][8][9][10][11][12] Thus, air-stable n-channel transistors exhibiting high electronic performance are rare in comparison with p-channel devices.…”
Section: Introductionmentioning
confidence: 99%
“…[4][5][6][7][8][9][10][11][12] Thus, air-stable n-channel transistors exhibiting high electronic performance are rare in comparison with p-channel devices. [7][8][9] Moreover, single crystals of TCNQ afford higher-performance n-channel devices than the thin-film transistors. 12 For instance, small molecules such as TCNQ (7,7,8,8tetracyano-p-quinodimethane) and DM-DCNQI (2,5-dimethyl-N,N 0 -dicyano-p-quinonediimine), which are both planar and strong electron acceptors, give air-stable n-channel thin-film OFETs.…”
Section: Introductionmentioning
confidence: 99%
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“…[1][2][3][4][5][6][7][8][9][10]. One can modify and tune the optical and electrical properties of a material by blending it with other materials in the form of hostguest systems.…”
Section: Introductionmentioning
confidence: 99%