2000
DOI: 10.1002/1097-4628(20010207)79:6<965::aid-app20>3.0.co;2-g
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Organic-inorganic hybrid materials. II. Chain mobility and stability of polysiloxaneimide-silica hybrids

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Cited by 17 publications
(9 citation statements)
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“…Polyimides are typically reinforced with silica via in-situ sol−gel methods to minimize phase segregation for optimal mechanical properties; condensation of alkoxysilane and imidization often proceed concurrently. The use of organic/inorganic phase cross-linkers consisting of both alkoxysilane and amine usually produces hybrids homogeneous at a molecular level. When cross-linkers are not used, the resulting silica particle sizes range from 50 nm to 1−2 μm and increase with increasing silica loadings (to ≈50 wt % vs ≈20 wt % silica for OAPS/PMDA and OAPS/ODPA). Table shows selected silica/polyimide hybrid systems with thermomechanical properties. A representative clay/polyimide hybrid system is also included for comparison 2 Selected Silica/Polyimide Hybrid Systems with Thermomechanical Properties ref.anhydrideaminesilica sourcecross-linkerhybrid structure (max.…”
Section: Resultsmentioning
confidence: 99%
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“…Polyimides are typically reinforced with silica via in-situ sol−gel methods to minimize phase segregation for optimal mechanical properties; condensation of alkoxysilane and imidization often proceed concurrently. The use of organic/inorganic phase cross-linkers consisting of both alkoxysilane and amine usually produces hybrids homogeneous at a molecular level. When cross-linkers are not used, the resulting silica particle sizes range from 50 nm to 1−2 μm and increase with increasing silica loadings (to ≈50 wt % vs ≈20 wt % silica for OAPS/PMDA and OAPS/ODPA). Table shows selected silica/polyimide hybrid systems with thermomechanical properties. A representative clay/polyimide hybrid system is also included for comparison 2 Selected Silica/Polyimide Hybrid Systems with Thermomechanical Properties ref.anhydrideaminesilica sourcecross-linkerhybrid structure (max.…”
Section: Resultsmentioning
confidence: 99%
“…ODPA/ODA imide (0 mol % OAPS) was prepared separately following traditional methods, which included preheating amic acid solutions before casting to increase the molecular weights to optimize properties. Thus, equimolar quantities of ODPA and ODA were dissolved together in 5 mL of N -methylpyrrolidinone (NMP) in 20-mL glass vials and preheated at ∼100 °C for 1 d. Film casting, curing, and retrieval from substrates were conducted as described above.…”
Section: Methodsmentioning
confidence: 99%
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“…The vibrations between 1000 and 1100 cm À1 confirmed that Si-O-Si network was present in PI hybrid films. 38,[42][43][44] Properties of the resulting PI films 22 However, the incorporation of OAPS or polysiloxane leads to a slight reduction in tensile strength as well as break elongation of samples B and C, most likely due to the lower molecular weight and poorer interactions of PI chains arising from the bulky structures and evident steric hindrance of OAPS and polysiloxane. Additionally, OAPS and polysiloxane consist of a great many Si-O bonds, which are less polar than imide rings, resulting in the increase of free volume of PI matrix and leading to poor interactions between the polymer chains; also, the interval between the PI chains may be increased.…”
Section: Ftir Characterization Of Prepared Pismentioning
confidence: 99%
“…Research groups all over the world are trying to develop low dielectric constant materials by incorporation of nanosized pores while retaining the core properties of the host matrix (Hedrick et al 2004;Mecerreyes et al 2001;Takeichi et al 2001). The combination of organic and inorganic materials in thin film form may help in achieving the desired dielectric constant values along with other necessary attributes, as they combine the advantages of both inorganic and the organic components (Ha et al 2008;Wu et al 2001;Tang et al 2007). The incorporation of tetraethoxysilane (TEOS) into the polyamic acid-a precursor to PI through blending has attracted great deal of interest for developing films with low dielectric constant by in situ generation of air filled silica domains within the PI matrix in nanometer regime at elevated temperature (Chen et al 2004;Chen and Iroh 1999).…”
Section: Introductionmentioning
confidence: 99%