Ultra-violet photodetectors based on p-ZnO/n-Siheterojunctions have been fabricated by radio-frequency magnetron sputtering technique. To develop heterojunction devices, thin films of pristine ZnO and Sb-doped (3 wt% and 5 wt%) ZnO are grown over the highly doped n-type silicon (Si) substrates. The so-grown thin films form isotype heterojunction between the n-type pristine ZnO and n-type Si substrate (n-ZnO/n-Si -) and p-n heterojunctions between p-type Sb-doped ZnO (Zn 0.97 Sb 0.03 O and Zn 0.95 Sb 0.05 O) and n-type Si substrates (p-Zn 1-x Sb x O/n-Si -). The structural analysis for the deposited films using Raman spectroscopy reveals the growth of high-quality ZnO thin films. In addition to the fundamental Raman modes of ZnO, some anomalous modes related to the multiphonon vibrations are also observed in the Raman spectra of the fabricated devices. The photoconduction behavior of the fabricated devices have been analyzed under UV-A (k = 365 nm) and UV-C (k = 254 nm) light at different illumination intensities from 0.152 to 1.0 mW/cm 2 . The average photoresponses of the n-ZnO/n-Si -, p-Zn 0.97 Sb 0.03 O/n-Si -, and p-Zn 0.95 Sb 0.05 O/n-Siheterojunction devices in UV-C illumination are found to be 45.12, 52.23, and 58.31%, respectively, which are found to be lower than those recorded under UV-A light (* 50.32, 72.53, and 82.62%, respectively) at an illumination intensity of 1 mW/cm 2 . The external quantum efficiency is an important parameter related to the device performance that is found to increase from 14.41 to 78.08% through 54.02%, with an increase in Sb-doping concentration from 0.0 to 5 wt% through 3 wt% in ZnO thin film. The response and recovery times of the fabricated devices are found to be lower than 1 s.