Organic pin-diodes approaching ultra-high-frequencies

Kleemann, Hans; Schumann, Stefan; Jorges, Udo; Ellinger, Frank; Leo, Karl; Lüssem, Björn

doi:10.1016/j.orgel.2012.03.011

Cited by 29 publications

(20 citation statements)

References 15 publications

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“…From Fig. 2(b), we observed a very high rectifying ratio up 7.8 Â 10 4 , which is comparable with other types of organic diodes [6,8,17]. But by examining the energy level diagrams show in Fig.…”

Section: Methodssupporting

confidence: 74%

“…In addition, another fascinating application is organic rectifying diodes for radio-frequency identification tags [1][2][3]. Various rectifying diodes have been exploited, these include metal/organic [4,5], inorganic/organic [6,7] and p-i-n organic/organic [8,9] semiconductor heterojunctions. The organic rectifying diode based on simple small molecular organic/organic heterojunctions is rare, and in fact has not been reported to date although the potential rectifying behaviors have been observed in organic photovoltaic cell devices based on planar donor-acceptor heterojunctions [10,11].…”

Section: Introductionmentioning

confidence: 99%

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A simple organic diode structure with strong rectifying characteristics

White

Wang

et al. 2014

Organic Electronics

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Section: Methodssupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

A simple organic diode structure with strong rectifying characteristics

White

Wang

et al. 2014

Organic Electronics

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“…Most of these were on glass substrates, for example, pentacene and C 60 pin diodes working as rectifiers up to 300 MHz 18 ; organic pentacene Schottky diodes operating up to 870 MHz 19 ; diodes based on C 60 and tungsten oxide showing a cut-off frequency of 800 MHz 20 . However, these devices required high-temperature process steps and hence could not be made on plastic substrates.…”

mentioning

confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

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“…a 2.4 GHz antenna [25], tuneable ferroelectric filters on organic substrates [26], barium strontium titanate varactors [27], all-inkjet printed capacitors [28] and ferroelectric capacitors [29]. Very fast organic PIN-diodes and rectifier circuits suited for frequencies up to 300 MHz were demonstrated [30]. The feasibility of three dimensional (3-D) integrated organic circuits such as ring oscillators [31] and steerable printed antennas [32] were shown.…”

Section: State Of the Artmentioning

confidence: 99%

“…Concepts architectures with frequency multipliers can be considered. Here, passive organic diodes which show a speed up to 300 MHz could be applied in the RF frontend section [30]. To boost the gain and frequencies, controlled positive feedback is interesting.…”

Section: Circuitsmentioning

confidence: 99%

Radio frequency electronics on plastic

Ellinger

Ishida

Shabanpour

et al. 2015

2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)

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Abstract-In this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 μm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation model shows good agreement with measurements. To achieve a sufficiently high yield, TFTs with gate lengths of around 5 μm are used for the circuit design. A Cherry Hopper amplifier with 3.5 MHz bandwidth, 10 dB gain and 5 mW dc power is presented. The fully integrated receiver covering a plastic foil area of 3 × 9 mm 2 includes a four stage cascode amplifier, an amplitude detector, a baseband amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a bandwidth of 2 -20 MHz and a gain beyond 15 dB were measured. Finally, an outlook regarding future advancements of high frequency electronics on plastic is given.

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Organic pin-diodes approaching ultra-high-frequencies

Cited by 29 publications

References 15 publications

A simple organic diode structure with strong rectifying characteristics

A simple organic diode structure with strong rectifying characteristics

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Radio frequency electronics on plastic

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