“…For example, to the low energy associated with the depois a monolinic crystal 4 , that forms sition of the thin film.…”
Section: The Resulting Rectifying Characteristics Ofmentioning
confidence: 99%
“…Thus, the 01 technique was further developed in its ability to act as an in-process monitor of the effects that exposure of the semiconductor surface to various chemical agents or process conditions have on the ultimate state of that surface. A second result of this analysis was the finding that the carrier 4 velocities across the organic thin film are unexpectedly high. In related research, direct measurements of these theoretical findings were verified, and indicated that the 01 HJ has considerable promise for high frequency optoelectronic device applications, as well as being a structure useful for high frequency analysis of semiconductor properties.…”
Section: ) a Detailed Theoretical Understanding Of The Transport Promentioning
confidence: 97%
“…(1) eating new application%" 4 and are leadig to a greater underHerm k is Doltzman's constant, T is the temperature q is the standing of semiconductors in general. These heterojunicelectronic charge, 1, is the saturation current, and 4,p Ls the tion consist of organic (either crystalline molecular or 01-Hi barrier potential which may be voltage dependent.…”
Section: -His Has Been Attributed' To Reactions Between These Twomentioning
confidence: 99%
“…The existence of traps in energies is essential to the understanding the more disordered film is consistent with of any semiconductor heterojunction For the hysterysis often observed in the the first time, we have measured 1 7 the current-voltage characteristics 4 . energy band discontinuity of an OI-HJ.…”
Section: (B)mentioning
confidence: 99%
“…At higher current densities attained at ed (JL ). As has been discussed elsewhere the current den-* Care" *Ame sity-voltage (I-P) characteristics" are described by the * WIPiO"e stmm L following set of simultaneous equations: 04Mso 4 organic film across the entire metal/substrate surface. posit the 0.027-m-diam ohmic metal dot contact using a The vacuum prior to thin-film deposition was <2 X 10 -procedure similar to that used in fabricating the metal/orTon'.…”
“…For example, to the low energy associated with the depois a monolinic crystal 4 , that forms sition of the thin film.…”
Section: The Resulting Rectifying Characteristics Ofmentioning
confidence: 99%
“…Thus, the 01 technique was further developed in its ability to act as an in-process monitor of the effects that exposure of the semiconductor surface to various chemical agents or process conditions have on the ultimate state of that surface. A second result of this analysis was the finding that the carrier 4 velocities across the organic thin film are unexpectedly high. In related research, direct measurements of these theoretical findings were verified, and indicated that the 01 HJ has considerable promise for high frequency optoelectronic device applications, as well as being a structure useful for high frequency analysis of semiconductor properties.…”
Section: ) a Detailed Theoretical Understanding Of The Transport Promentioning
confidence: 97%
“…(1) eating new application%" 4 and are leadig to a greater underHerm k is Doltzman's constant, T is the temperature q is the standing of semiconductors in general. These heterojunicelectronic charge, 1, is the saturation current, and 4,p Ls the tion consist of organic (either crystalline molecular or 01-Hi barrier potential which may be voltage dependent.…”
Section: -His Has Been Attributed' To Reactions Between These Twomentioning
confidence: 99%
“…The existence of traps in energies is essential to the understanding the more disordered film is consistent with of any semiconductor heterojunction For the hysterysis often observed in the the first time, we have measured 1 7 the current-voltage characteristics 4 . energy band discontinuity of an OI-HJ.…”
Section: (B)mentioning
confidence: 99%
“…At higher current densities attained at ed (JL ). As has been discussed elsewhere the current den-* Care" *Ame sity-voltage (I-P) characteristics" are described by the * WIPiO"e stmm L following set of simultaneous equations: 04Mso 4 organic film across the entire metal/substrate surface. posit the 0.027-m-diam ohmic metal dot contact using a The vacuum prior to thin-film deposition was <2 X 10 -procedure similar to that used in fabricating the metal/orTon'.…”
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