Thin films of pentacene ͑P͒ have been vacuum codeposited on SiO 2 with low concentrations of 6,13-pentacenequinone ͑PQ͒ in order to investigate the impact on the pentacene thin film structure. Within a range of 2%-20% PQ concentration no intercalation of the compounds can be observed by means of x-ray diffraction and infrared absorption spectroscopy. The crystalline quality of the P films stays unchanged by the presence of PQ, whereas P bulk phase contributions are being suppressed at PQ concentrations ജ5%, which could be confirmed by means of atomic force microscopy. From the results the authors suggest phase-separated PQ growth as well as PQ nucleation at P grain boundaries. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2767972͔ Thin films of conjugated organic molecules such as pentacene ͑P͒ ͑C 22 H 14 ͒ have been widely investigated during the last years due to the applicability in organic field effect transistors ͑OFETs͒.1-3 The charge carrier mobility in P thin films is governed by structural defects, the density of grain boundaries, 4,5 and the purity of the material. It was found that 6,13-pentacenequinone ͑C 22 H 12 O 2 ͒ is a main impurity in commercially available P and can reduce the charge carrier mobility in P single crystals. 6 In addition, it was suggested that PQ can form deep traps of 0.2-0.75 eV for electrons within a P matrix, depending on the mutual molecular orientation. 7,8 In a recent study it was shown that P and PQ exhibit pronounced phase separation if codeposited in a molar ratio of 1:1. 9 However, up to now no attention has been directed to possible structural changes of P thin films due to the presence of low concentrations of PQ during P thin film growth. We address this issue by controlled vacuum codeposition of P and PQ.Pentacene ͑Fluka, purum grade 99.9%͒ and 6,13-pentacenequinone ͑Sigma-Aldrich Co., purity 99%͒ were used without further purification. Films of nominally 30 nm thickness were obtained by vacuum codeposition ͑base pressure of 3 ϫ 10 −7 mbar, 1 nm/ min total deposition rate͒ from resistively heated ceramic crucibles. The nominal film thickness was measured in situ by a quartz microbalance. Substrates were ͑100͒ p-doped silicon wafers ͑Siegert Consulting, prime grade͒ with a thermally grown oxide layer of 50 nm, cut into 10ϫ 10 mm coupons. The root mean square roughness of the substrates was determined to 0.2 nm by atomic force microscopy ͑AFM͒ ͑all AFM investigations were done on Veeco Nanoscope III in TappingMode®͒; the substrates were used as received; the cleanliness was confirmed prior to organic film deposition by AFM investigations. X-ray diffraction ͑XRD͒ measurements were performed at the beamline W1.1 at the synchrotron radiation source HASYLAB ͑Hamburg, Germany͒; the wavelength was set to = 0.11808 nm. The upper limit of instrumental broadening of this setup was estimated by the 2⌰ width of the ͑111͒ reflection of a Ag͑111͒ single crystal ͑0.0382± 0.0003͒°. Fourier transform infrared absorption spectroscopy measurements ͑FTIR͒ ͑resolution of 2.0 cm...