Organized porous alumina membranes for high density silicon nanowires growth

Bernardin, T.; Dupré, Ludovic; Burnier, Luc; Gentile, P.; Peyrade, D.; Zelsmann, M.; Buttard, D.

doi:10.1016/j.mee.2011.05.005

Cited by 4 publications

(2 citation statements)

References 9 publications

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“…In addition, templated nanowire growth can occur through holes formed in an inert mask layer on a substrate. An example of this method for bottom-up wire placement and alignment is growth of single crystal nanowires in the pore channels that form in anodized aluminum oxide (AAO) [190,191]. This templating process achieves a degree of positional and alignment control of the wires, as the vertical pores can assemble into a hexagonal array during anodization of aluminum [191].…”

Section: Bottom-up Placement and Alignment Methodsmentioning

confidence: 99%

“…An example of this method for bottom-up wire placement and alignment is growth of single crystal nanowires in the pore channels that form in anodized aluminum oxide (AAO) [190,191]. This templating process achieves a degree of positional and alignment control of the wires, as the vertical pores can assemble into a hexagonal array during anodization of aluminum [191]. If the AAO template layer is formed on a single crystal substrate, epitaxy can dictate the crystallographic orientation of the resulting vertical nanowires as well.…”

Section: Bottom-up Placement and Alignment Methodsmentioning

confidence: 99%

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Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

125

122

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Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

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Section: Bottom-up Placement and Alignment Methodsmentioning

confidence: 99%

Section: Bottom-up Placement and Alignment Methodsmentioning

confidence: 99%

Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

125

122

View full text Add to dashboard Cite

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Structural investigation of nanoporous alumina film with grazing incidence small angle X-ray scattering

Buttard

Schülli

Lazzari

2013

Phys. Status Solidi A

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International audienceNanoporous alumina films (NPAF) have been elaborated by anodization of an aluminum film on silicon wafer. Ex situ structural characterization of the films has been achieved with grazing incidence small angle X-ray scattering under ultra high vacuum atmosphere and using a synchrotron source. The comparison of the experimental patterns with suitable modeling confirms the cylindrical geometry of the pores well as the good local hexagonal order. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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