1989
DOI: 10.1016/0921-5093(89)90566-2
|View full text |Cite
|
Sign up to set email alerts
|

Organo-metallic chemical vapour deposition of silicon-rich amorphous SixC1−x refractory layers using SiEt4 as a single source

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

1992
1992
2017
2017

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 12 publications
(2 citation statements)
references
References 13 publications
0
2
0
Order By: Relevance
“…This morphology was also observed for Al films deposited on polished bulk Al substrates and on CVD SiC, obtained from tetraethylsilane following a procedure described in Ref. 30. When the concentration of TIBA in the feed gas was increased ͑sample Al3P2T2A͒, the thickness increased and film became more continuous.…”
Section: Resultsmentioning
confidence: 63%
“…This morphology was also observed for Al films deposited on polished bulk Al substrates and on CVD SiC, obtained from tetraethylsilane following a procedure described in Ref. 30. When the concentration of TIBA in the feed gas was increased ͑sample Al3P2T2A͒, the thickness increased and film became more continuous.…”
Section: Resultsmentioning
confidence: 63%
“…Obviously, the film composition depends on the selection of the precursors. For instance, the use of SiEt 4 (Et = C 2 H 5 ) produces surprisingly Si-rich SiC films though the Si:C atomic ratio in the starting molecule is 1:8 as a result of the kinetic lability of Et groups [8]. However, the film composition can be controlled using a hydrocarbon as co-reactant to get 1:1 or C-rich SiC coatings [9], and even for the growth of compositionally modulated Si x C 1 − x layers [10].…”
Section: Introductionmentioning
confidence: 99%