Organometallic Gas-Phase Epitaxy Growth of Gallium Arsenide on a Non-Planar Surface Obtained by Etching in Chlorpentafluoroethane Plasma

,; Okhapkin, A.I.; Daniltsev, V.M.; ,; Kraev, S.A.; ,; Korolyov, S.A.; ,; Arkhipova, E.A.; ,; Zorina, M.V.; ,

doi:10.61527/appfe-2023.199-201

Materials of the 26th All-Russian Youth Scientific Conference 2023

DOI: 10.61527/appfe-2023.199-201

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Organometallic Gas-Phase Epitaxy Growth of Gallium Arsenide on a Non-Planar Surface Obtained by Etching in Chlorpentafluoroethane Plasma

A.I. Okhapkin,

V.M. Daniltsev,

S.A. Kraev

et al.

Abstract: In this work the features of organometallic gas-phase epitaxy of gallium arsenide in grooves obtained by etching in plasma of chlorpetafluoroethane were studied. It was shown that the epitaxial overgrowth depends on grooves location relative to the base cut of the substrate.

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Organometallic Gas-Phase Epitaxy Growth of Gallium Arsenide on a Non-Planar Surface Obtained by Etching in Chlorpentafluoroethane Plasma

Abstract: In this work the features of organometallic gas-phase epitaxy of gallium arsenide in grooves obtained by etching in plasma of chlorpetafluoroethane were studied. It was shown that the epitaxial overgrowth depends on grooves location relative to the base cut of the substrate.

Cited by 0 publications

References 3 publications

No citations

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