Organosilicon/silicon oxide gas barrier structure encapsulated flexible plastic substrate by using plasma-enhanced chemical vapor deposition

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

“…The Si-O signal of the films synthesized from the TMS-O 2 -NH 3 gas mixture at the flow ratios of 0, 0.25, and 0.5 showed almost the same shape with a tail extending to the higher wavenumbers. As quoted from the previous reports, the appearance of this tail was attributed to the signals overlapping from the second asymmetric stretching modes of the longitudinal-optic (LO 4 ) and transverse-optic (TO 4) vibration pairs in the Si-O cage/ring structures which correlated with the structural disorder and film's porosity in the Si-O-Si networks [9,30,31]. The main absorbance peak of the Si-O signal at 1066 cm −1 which appeared in the film synthesized from the TMS-O 2 gas mixture gradually shifted to a low wavenumber of 1060 cm −1 , as the film was prepared using the ammonia gas at a gas flow ratio of 0.5.…”

“…However, since the above-mentioned depositions were carried out using two different systems which might induce additional contaminants and prolong the fabrication time, we developed an organosilicon/SiO x multilayered structure consecutively prepared in one PECVD system by simply altering the tetramethysilane (TMS) monomer and TMS-O 2 gas mixture, respectively. A very low WVTR of 4.4 × 10 −4 g/m 2 /day was achieved with the polyethylene terephthalate (PET) substrate coated with a three-paired multilayered structure possessing an optimal residual internal stress [9]. Recently, Alipour et al also developed two polymer-based multilayered structures instead of the organic/inorganic structure to result in resistance to crack growth under tensile strain and a decrease in the oxygen transmission rate [10].…”

High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

“…The spectra were composed of a significant Si-O-Si stretching mode (denoted as TO 3 in Figure 2b) and a shoulder that could be deconvolved into three peaks at about 1101, 1143, and 1194 cm −1 , respectively. As referred to in the reports [15,17,[19][20][21], these peaks could be identified as the C- reduction in the deposition rate with the deposition temperature increasing was ascribed to the enhancement in the lateral diffusion of the products on the coating surface at an elevated temperature. Meanwhile, the evolutions of the physic-to chemi-adsorptions on the surface that were activated by the substrate temperature were likely to be the main reason for the sharp decrease in the deposition rate as the temperature increased from 30 to 60 °C , which may have resulted in the film densification and a better adhesion to the substrate.…”

“…The spectra were composed of a significant Si-O-Si stretching mode (denoted as TO3 in Figure 2b) and a shoulder that could be deconvolved into three peaks at about 1101, 1143, and 1194 cm −1 , respectively. As referred to in the reports [15,17,[19][20][21], these peaks could be identified as the C-H/C-C bonds and the second asymmetric modes of the longitudinal-optic (LO4) and the transverse-optic (TO4) vibration pairs in the Si-O-Si networks. The formation of the C-H/C-C bond was ascribed to the plasma polymerization of only the TMS monomer, whereas the intensity of the TO4 mode corresponded to the degree of the structural disorder in the Si-O-Si networks.…”

“…In our previous work, we demonstrated a six-paired organosilicon/SiO x multilayered structure with a WVTR of about 10 −5 g/m 2 /day, which was consecutively prepared by using one plasma-enhanced chemical vapor deposition system [15]. By optimizing the stress residing in the multilayered structure, a WVTR lower than 10 −4 g/m 2 /day was obtained from the three-paired organosilicon/SiO x multilayered structure [16].…”