Orientation control of (Bi,La)4Ti3O12 films by addition of various silicates and germanates

Kawashima, Yoshihito; Kijima, Takeshi; Ishiwara, Hiroshi

doi:10.7567/ssdm.2002.d-2-5

Cited by 1 publication

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“…However, leakage current often interferes with the polarization switching and poling process and makes BiT unsuitable for the ferroelectric devices [35,112,114]. It is recognized that defects are closely related to the leakage current and polarization properties of BiT [50,77,78,87,102]. Takahashi et al [104][105][106] have revealed the conduction mechanism of BiT single crystals and polycrystalline ceramics at high temperatures.…”

Section: Discussionmentioning

confidence: 97%

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

Noguchi

Miyayama

2011

Lead-Free Piezoelectrics

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The static and dynamic behaviors of ferroelectric domains are the underlying basis of various functional properties of ferroelectric materials, such as dielectricity, piezoelectricity, ferroelectricity, and electro-optic and acoustic-optic effects. Since the performance of ferroelectric devices is governed by these behaviors, various techniques for enhancing device performance have been widely investigated with the aim of controlling ferroelectric domains [19,20,88,109]. Such control, however, is often prevented not only by a large leakage current but also by undesirable behaviors such as domain clamping [16,73,95], fatigue [17,98], aging [63,68], imprinting [110], and depoling [98]. Ferroelectric devices thus suffer from degraded polarization and poor reliability due to insufficient control over ferroelectric domains. It is considered that the poor polarization properties, fatigue, and aging, etc. are governed by the interaction between defects and ferroelectric domains.Bismuth layer-structured ferroelectrics (BLSFs) have attracted much attention because of their high Curie temperature (T C ) and larger spontaneous polarization (P s ). The relation between crystal structure and ferroelectric properties of BLSFs has been widely investigated because of their anisotropy of ferroelectric polarization [10,22,113]. In the crystal structure of BLSFs, perovskite layers (A mÀ1 B m O 3m+1 ) are sandwiched between Bi 2 O 2 layers, where m is the number of BO 6 octahedral layers with A-site cations in the perovskite layers, as shown in Fig. 14

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