Orientation-controlled growth of hexagonal boron nitride monolayers templated from graphene edges

Abstract

The crystal orientation of epitaxially grown hexagonal boron nitride (hBN) monolayers from graphene edges was investigated. Low-energy electron microscopy observations reveal that the orientation of individual hBN grains is dependent on the direction of the templated zigzag edges of graphene. Furthermore, the triangular atomic defects in hBN were used to confirm the orientation of epitaxial hBN through high-resolution transmission electron microscopy observations. The results indicate that the orientation of epitaxially grown hBN is determined by the formation of carbon–boron bonds at the graphene/hBN interface, which provides a promising way of producing uniform interface structures and orientation-controlled hBN grains.

Epitaxial Growth of h‐BN on Templates of Various Dimensionalities in h‐BN–Graphene Material Systems

“…By further including the microstructure information into geometric models, the detailed structures of G–h‐BN interface, edges, and stripes of h‐BN can be naturally obtained (Figure b). For a demonstration, B atom is considered to link graphene ZZ edges in our case . It should be mentioned that while BC bonding is dominated in our consideration, fewer antiphase boundaries with NC configuration statistically exist in ZZ edge‐templated h‐BN layer, which is often observed in the case of GaAs‐on‐Si epitaxy .…”

On the Electronic Structure of a Recently Synthesized Graphene-like BCN Monolayer from bis-BN Cyclohexane: A DFT Study

“…Recently, two-dimensional boron-nitrogen-carbon monolayers (h-BCN) with tunable direct bandgaps have been both experimentally [15][16][17][18][19] and theoretically [20][21][22][23] studied. Their structures consisted of an in-plane combination of homogeneous graphene and h-BN sheets or nanoribbons.…”

Band‐Gap Engineering of Graphene Heterostructures by Substitutional Doping with B3N3

“…[21][22][23] Recent studies reportedt he synthesis of such in-plane heterosheets of graphene and h-BN. [24][25][26][27][28][29][30][31][32] Furthermore, nanoscale graphene flakes containing aB 3 N 3 ring (B 3 N 3 : borazine) have been chemically synthesized, indicating the possibility of BNC heterosheets in which the B 3 N 3 is periodically implemented in ah oneycombn etwork of C. [27,[33][34][35] By analogy with porous graphene or graphene nanomeshes, B 3 N 3 -doped graphene is ap romising candidate for as emiconductingg raphene materialw hose band gap can be tuned by controlling the mutuala rrangemento fB 3 N 3 in graphitic network. Furthermore,t he electrostatic potential modulation at the border could providef urther modulation of the hexagonal symmetry of the graphene network, leading to anenergy gap in the elec-We investigated the energetics and electronic structure of B 3 N 3 -dopedg raphene employing density functional theory calculationsw ith the generalized gradient approximation.…”

“…Heterostructures comprising graphene and h‐BN cause a finite gap between the conduction and valence states, because the border between graphene and h‐BN effectively terminates the distribution of π electrons throughout the graphene region . Recent studies reported the synthesis of such in‐plane heterosheets of graphene and h‐BN . Furthermore, nanoscale graphene flakes containing a B 3 N 3 ring (B 3 N 3 : borazine) have been chemically synthesized, indicating the possibility of BNC heterosheets in which the B 3 N 3 is periodically implemented in a honeycomb network of C .…”