Orientation dependence of electrical properties for Bi4−xNdxTi3O12 (x=0.85) thin film deposited on p-type Si(100) substrate

Yi, Seung Woo; Kim, Sang Su; Kim, Won-Jeong; Do, D.

doi:10.1016/j.apsusc.2008.07.182

Cited by 4 publications

(1 citation statement)

References 20 publications

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“…As we expected, the P r value of the as-prepared BNT film with the high c -axis orientation was 20.8 μC/cm 2 . It was higher than that of BIT film, and comparable with those similar materials deposited onto other substrates 50, 51 . However, the highest P r record of 51.5 μC/cm 2 was achieved in the c -axis oriented BNT thin film, which was deposited onto Pt/TiO 2 /SiO 2 /Si via a CSD process 7 .…”

Section: Resultssupporting

confidence: 83%

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Duan

Cui

Zhao

et al. 2017

Sci Rep

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A La0.67Sr0.33MnO3 (LSMO) ferromagnetic layer and a Nd3+/Hf4+ co-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3-xHfxO12 (BNTHx, x = 0, 0.025, 0.05, 0.1 and 0.15)) ferroelectric layer were successively deposited onto the (00 l)-oriented LaNiO3 (LNO) layer buffered (001) Si substrate via all chemical solution deposition (CSD) method. As a result, the BNTHx/LSMO ferromagnetic-ferroelectric composite films integrated on Si substrate exhibit high c-axis orientation. The Nd3+/Hf4+ co-substituted BNTHx films have the lower leakage current and the better ferroelectric properties than the mono-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3O12 and Bi4Ti2.95Hf0.05O12) films. In particular, the BNTH0.05/LSMO/LNO film has the lowest leakage current density of 2.5 × 10−7 A/cm2 at 200 kV/cm, and the highest remnant polarization (Pr) of 27.3 μC/cm2. The BNTH0.05/LSMO/LNO composite film also exhibits the soft ferromagnetism characteristics with a high saturated magnetization of 258 emu/cm3 at 300 K, and the excellent magnetoelectric (ME) effect. The variations of ME voltage coefficient α E values with DC bias magnetic field H bias shows that the BNTH0.05/LSMO/LNO film has the high α E value at near zero H bias. Moreover, at H bias = 0 Oe, the α E value gradually increases from zero with the increasing of the AC magnetic field frequency, and eventually reaches about 18.9 V/cm·Oe at 100 kHz, suggesting the existence of self-biased ME effect.

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Section: Resultssupporting

confidence: 83%

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Duan

Cui

Zhao

et al. 2017

Sci Rep

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show abstract

Growth and characterization of Bi 3.15 Nd 0.85 Ti 2.95 Hf 0.05 O 12 /La 0.67 Sr 0.33 MnO 3 composite film with strong magnetoelectric effect by chemical solution deposition under moderate crystallization temperature

Duan

Zhu

Cui

et al. 2018

Journal of Alloys and Compounds

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FABRICATION AND ORIENTATION DEPENDENCE ON ELECTRICAL PROPERTIES OF Na_0.5Bi_4.5Ti₄O₁₅ THIN FILMS

Kim

et al. 2009

Integrated Ferroelectrics

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Orientation dependence of electrical properties for Bi4−xNdxTi3O12 (x=0.85) thin film deposited on p-type Si(100) substrate

Cited by 4 publications

References 20 publications

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Growth and characterization of Bi 3.15 Nd 0.85 Ti 2.95 Hf 0.05 O 12 /La 0.67 Sr 0.33 MnO 3 composite film with strong magnetoelectric effect by chemical solution deposition under moderate crystallization temperature

FABRICATION AND ORIENTATION DEPENDENCE ON ELECTRICAL PROPERTIES OF Na_0.5Bi_4.5Ti₄O₁₅ THIN FILMS

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Orientation dependence of electrical properties for Bi4−xNdxTi3O12 (x=0.85) thin film deposited on p-type Si(100) substrate

Cited by 4 publications

References 20 publications

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Growth and characterization of Bi 3.15 Nd 0.85 Ti 2.95 Hf 0.05 O 12 /La 0.67 Sr 0.33 MnO 3 composite film with strong magnetoelectric effect by chemical solution deposition under moderate crystallization temperature

FABRICATION AND ORIENTATION DEPENDENCE ON ELECTRICAL PROPERTIES OF Na0.5Bi4.5Ti4O15 THIN FILMS

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FABRICATION AND ORIENTATION DEPENDENCE ON ELECTRICAL PROPERTIES OF Na_0.5Bi_4.5Ti₄O₁₅ THIN FILMS