Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires

Abstract

Understanding the electrical properties of defect-free nanowires with different structures and their responses under deformation are essential for design and applications of nanodevices and strain engineering. In this study, defect-free zinc-blende- and wurtzite-structured InAs nanowires were grown using molecular beam epitaxy, and individual nanowires with different structures and orientations were carefully selected and their electrical properties and electromechanical responses were investigated using an electrical probing system inside a transmission electron microscope. Through our careful experimental design and detailed analyses, we uncovered several extraordinary physical phenomena, such as the electromechanical characteristics are dominated by the nanowire orientation, rather than its crystal structure. Our results provide critical insights into different responses induced by deformation of InAs with different structures, which is important for nanowire-based devices.

Piezoelectricity in non-nitride III–V nanowires: Challenges and opportunities

“…Indeed, in a further study by Zheng et al, pure phase NWs (<0001> WZ and <110> ZB) were subjected to compressive strains, and the electromechanical transport effects were examined (80). In their experiments the NWs exhibited ohmic behaviour, and so the piezotronic effect was excluded from the explanation, leaving behind piezoresistivity.…”

In SituAtomistic Deformation Mechanisms Study of Nanowires

“…Today, semiconductor NWs, such as silicon NWs [49][50][51], GaAs NWs [52,53], and InAs NWs [54,55], have been widely used for fabricating various electronic and optoelectronic nanodevices due to their excellent properties. Although recent results show that retained elastic-plastic strains in NWs significantly affect their electronic properties [56], there is only limited information on the mechanical property of the Si NWs due to the difficulty of carrying out in situ tensile or bending measurements on individual NWs.…”

Study on fracture behavior of individual InAs nanowires using an electron-beam-drilled notch

“…[1][2][3][4][5] III-As NWs have been also recently suggested as an element for novel electromechanical nanodevices due to the specic response of current to strain. 6,7 The reliability of such nanodevices becomes important because of the low dimensionality as well as overall size of the devices. Therefore, characterization and understanding of the mechanical properties of III-As NWs is essential for designing, fabricating, and operating such nanodevices.…”

“…[8][9][10][11][12][13] However, the precise characterization of mechanical properties of nanostructures is oen considered to be challenging mostly because of its limited dimension, resulting in difficulty to nd all-in-one instruments/ methods which can handle and manipulate the nanostructures and enable to observe and measure properties with enough spatial resolution. Several attempts have been made in recent years to correctly measure the mechanical properties of nanostructures with a variety of techniques, such as dynamic resonance in electron stroboscopy, 14 probe-based compressive and tensile testing using transmission electron microscopy (TEM), 6,15,16 and atomic force microscopy (AFM). 17,18 Table S1 † summarizes recent experimental studies on mechanical properties of InAs NWs, based on various electron microscopy techniques.…”