1994
DOI: 10.1016/0921-5107(94)90127-9
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Orientation dependence of morphology of (Hg, Cd)Te films grown by isothermal vapor phase epitaxy

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Cited by 4 publications
(2 citation statements)
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“…ISOVPE MCT films show that the surface morphology is independent of substrates for both pure and alloyed substrates, but it is different for each crystalline orientation [25][26][27]. In Figs.…”
Section: Article In Pressmentioning
confidence: 99%
“…ISOVPE MCT films show that the surface morphology is independent of substrates for both pure and alloyed substrates, but it is different for each crystalline orientation [25][26][27]. In Figs.…”
Section: Article In Pressmentioning
confidence: 99%
“…In the grown material with Hg overpressure the corresponding value is of the order of 10 16 cm -3 [12]. When the growth condition is without Hg overpressure, the Hg vacancies concentration is larger, which determines that holes concentration is also larger [13].…”
Section: Resultsmentioning
confidence: 98%