Orientation dependence of phase diagrams and physical properties in epitaxial Ba 0.6 Sr 0.4 TiO 3 films

Using a modified Landau-Devonshire type thermodynamic potential, we show that dielectric tunability η of a tetragonal ferroelectric film can be analytically solved. At a given electric field E, η is a function of the remnant polarization ($$P_0^f$$ P 0 f ) and the small-field relative dielectric permittivity ($$\chi _0^f$$ χ 0 f ), which are commonly measured material properties. After a survey of materials, a large η~80% is predicted to be achievable in a (001)-oriented tetragonal (K0.5,Na0.5)NbO3 film. This strain-stabilized tetragonal phase is verified by density functional theory (DFT) calculations. (K0.5,Na0.5)NbO3 films based on this design were successfully prepared via a sputtering deposition process on SrRuO3-buffered (100)SrTiO3 substrates. The resulted epitaxial films showed a sizable $$P_0^f$$ P 0 f (~0.21C m−2) and a large $$\chi _0^f$$ χ 0 f (~830–860), as well as a large η close to the theoretical value. The measured dielectric tunabilities as functions of E are well described by the theoretical η(E) curves, validating our integrated approach rooted in a theoretical understanding.

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Crystallographic orientation-dependent piezoelectric response in BaTiO3 thin films and the domain evolution under different temperatures

Zhu

2019

Journal of Applied Physics

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The effects of crystallographic orientation on the domain structures and piezoelectric response of BaTiO3 (BTO) thin films were investigated by piezoresponse force microscopy (PFM) systematically. It is found that the domain structures of BTO films are obviously orientation dependent, and the (111) oriented BTO film shows the best piezoelectric properties. Therefore, the nanoscale polydomain switchings within valid single grains of the BTO(111) thin film were observed by PFM under different temperatures. According to the switching process, the a1/a2c, r/a2c, and a1c/r polydomain states were specially introduced into the theoretical model to describe the temperature-induced polydomain switchings of the BTO(111) thin film. The misfit strain-temperature phase diagram was simulated to present the a1/a2c-r/a2c-a1c/r-p domain switching, which corresponds with the threshold temperature of domain switchings obtained from the experimental results of the BTO(111) thin film.

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Orientation dependence of phase diagrams and physical properties in epitaxial Ba 0.6 Sr 0.4 TiO 3 films

Cited by 4 publications

References 20 publications

The dielectric properties of alternately doped Ba1-xSrxTiO3 films with different Ba/Sr ratios

The dielectric properties of alternately doped Ba1-xSrxTiO3 films with different Ba/Sr ratios

Achieving a high dielectric tunability in strain-engineered tetragonal K0.5Na0.5NbO3 films

Crystallographic orientation-dependent piezoelectric response in BaTiO3 thin films and the domain evolution under different temperatures

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