Orientation-dependent electrochemical response of LaSrNiO4 epitaxial films

Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing

“…In ion gating, electronic carriers are injected into the functional material via charge compensation along with the transport of ions. [33][34][35][37][38][39][40][41][42][43][45][46][47][48][49][50][51][52][53] Therefore, measuring electrical resistance is a powerful probe method to understand the internal state of functional materials. Herein, we fabricated an all-solid-state reduction/oxidation (redox) device by stacking a functional material and a solid electrolyte and focused on the transient response of the electrical resistance of the functional materials to time-series data input duration to clarify changes in the internal state (i.e.…”