Orientation dependent performance of 635nm vertical cavity surface emitting QW red laser

Islam, Muhammad Mainul; Sarker, Shamim; Hasan, Mahbub

doi:10.1109/eict.2015.7391966

Cited by 2 publications

(2 citation statements)

References 21 publications

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“…[18] has reported the dispersion of energy band profiles of GaAsBi/GaAs and InGaAsN/GaAs QWs developed on distinct (hhl)-oriented QWs. The structural and electrical features of cubic BN/GaN as well as AlN/GaN super lattices produced in various crystallographic orientations have been studied analytically [19,20]. A comprehensively constrained cubic InGaN QW blue-violet laser as well as an InGaP/GaP QW red laser have indeed undergone crystal orientation-focused optoelectronic investigation [21,22].…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Mijwil

2022

AJET

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The optoelectronic achievement of a lattice matching InGaAs/InP lateral cavity surface radiating LASER in crystal orientations (100), (110), (111), (113), and (131) is computationally simulated utilising MATLAB by attempting to solve a k.p Hamiltonian of eight-band utilising only a finite difference strategy with spin-orbit linkage. To shift wave-vector k as well as Hamiltonian from traditional (100) plane orientation, tensor plane revolution equations are used. It is demonstrated that optical emission spectrum and crystal plane alignments have a significant correlation. At a carriers injection density of 2.50 x 1018 per cm3, the maximum and minimum gains are measured in the (111) as well as (100) orientations, respectively, with optimum emission wavelengths of 1770.00nm and 1680.00nm. This research will serve as a catalyst for the development of ultra-fast optoelectronic devices with improved performance thanks to the use of non-100 orientation epitaxial layers.

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Section: Introductionmentioning

confidence: 99%

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Mijwil

2022

AJET

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“…The frequency response of a wurtzite In 0.17 Ga 0.83 N/GaN quantum well laser and in different crystal orientations are calculated by a standard 4th order Runge-Kutta method, which indicates the highest magnitude (dB) response in semipolar (1122) crystal orientation [26]. The crystal orientation-dependent optoelectronic analysis of a compressively strained cubic InGaN QW blue-violet laser and InGaP/GaP QW red laser have been documented [27,28]. In addition, Chang investigated the effects of biaxial tensile stress and n-type doping on the optical gain in (001), (110), and (111) oriented Ge lasers [29].…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

Zhao²,

Gao³

2022

Crystals

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High-speed VCSELs are widely used for high-capacity, short-range data communication links. Here, we numerically investigate the optical and electronic properties of a crystal orientation-dependent 1.06% compression InGaAs-AlGaAs laser emitting around 850 nm. The reduction of the density of states is observed in the largest energy range for the quantum well in the (110) orientation compared with the conventional (001) orientation. The calculated transparency carrier density decreases from 2.74 × 1018 cm−3 to 1.88 × 1018 cm−3 with the gain coefficient rising from 4969.4 cm−1 to 5427.2 cm−1 in (110) orientation. The 3 dB bandwidth of 31.25 GHz is realized in the (110) orientation, which can support 60 Gbps (NRZ) applications.

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Orientation dependent performance of 635nm vertical cavity surface emitting QW red laser

Cited by 2 publications

References 21 publications

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

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