We
present the spatially resolved modification of the topography and
electronic properties of monolayer graphene by a low dosage of atomic
oxygen on the nanometer scale. Using the combination of an ultrahigh-vacuum
scanning tunneling microscope and a gas beam of oxygen atoms, we show
that the surface O-atoms, even at a low coverage of O/C = ∼1/150,
serve as p-type dopants that leads to site-dependent partial and full
graphene band modifications up to a gap of a few hundred millielectronvolts.
The degree of modification and the number of O-atom-induced charge-holes
per area are inversely proportional to the distance between the measuring
position and the location of the nearest adsorbate. However, the number
of holes contributed per oxygen atom is found to be a site-independent
constant of 0.15 ± 0.05. For a small population of adsorbates
taller than 4 Å, the graphene energy bands are no longer resolved;
instead, our tunneling spectra show very spatially localized but highly
dense states over a wide potential range, which indicates a sole tunneling
contribution from the tall stacks of the electron-rich O-atoms and
a complete decoupling from the graphene bands.