Orientation instability of domain boundary in ferroelectrics

Chervonobrodov, S. P.; Roytburd, Alexander L.

doi:10.1080/00150198808235457

Cited by 14 publications

(5 citation statements)

References 3 publications

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“…Under an applied field, the tip moves first, since the electrostatic pressure is approximately constant over the wall, and the barrier is lowest at the polarization-charged tip. It is believed that domain walls are unstable under finite electrostatic pressure [19], and ripples can appear. In order for the needle to retract, the tip must transfer its charge to lower parts of the wall.…”

Section: Resultsmentioning

confidence: 99%

Efficient Switching and Domain Interlocking Observed in Polyaxial Ferroelectrics

Krishnan

Treacy

Bisher

et al. 2002

Integrated Ferroelectrics

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We present transmission electron microscopy observations of domain wall motion in thin freestanding KNbO 3 crystals under applied electric fields.Since there is no substrate, there is no elastic clamping of 90 • domains. We observe that curved and tilted 90 • domain walls are the most mobile, whereas untilted 90 • domain walls are resistant to field-induced motion.We explain this result in terms of two factors. First, the switching pressure on a domain wall (P 2 −P 1 )·E is determined by the relative electrostatic energies of the neighboring polarizations P 1 and P 2 . Consequently, some 90 • domain walls are immobile under certain field directions, leading to domain interlocking. Second, domain walls experiencing a high switching pressure move by a ripple mechanism, and do not move as rigid sheets. The tilted wall region in such a ripple has a polarization charge, and an associated depolarization field, which reduces the local switching barrier. An accumulation of polarization charge can result in a tilted or curved wall, as occurs at the mobile tips of 90 • domain needles.Any increase in density of immobile wall configurations with cycle time represents an inherent contribution to fatigue. Uniaxial ferroelectrics, with polarizations parallel to the field, should not experience such domain interlocking.

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Section: Resultsmentioning

confidence: 99%

Efficient Switching and Domain Interlocking Observed in Polyaxial Ferroelectrics

Krishnan

Treacy

Bisher

et al. 2002

Integrated Ferroelectrics

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“…Even better experimental results are necessary to discuss the different theories and models of interface orientations (Roytburd 1974, 1987. Sapriel 1975, Aleshko-Ozhevskij 1983, Chervonobrodov and Roytburd 1988. Finally, further experiments must clarify the possible correlation between the domain texture species, the orientauons of the domain walls and the phase front shape.…”

Section: Discussionmentioning

confidence: 99%

Phase front shapes in the KD₂PO₄paraelectric-ferroelectric transition

Bornarel¹,

Cach²

1993

J. Phys.: Condens. Matter

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The competition between the elastic energy and the elecmlatic energy induces particular shapes of the phase front at the KDzPOa first-order Vansition. nte coexistence of ule two phases is reported for a paraele&ic-femelecvic m i t i o n : the relevant domain textllies and dielectric properlies are described. It is shown that the Lilt angle between the phase front and the (001) plane never exceeds 22" in our experiments.

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“…3a,b). The observed zig-zag domain walls clearly indicate that even the compensation by defects is insufficient or too slow for the creation of a straight T-T wall 25 .…”

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confidence: 98%

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

et al. 2015

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Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another possibility exists whereby the concentration of charge carriers is modified using polarization charge as a quasi-dopant, which implies the possibility to write, displace, erase and re-create channels having a metallic-type conductivity inside a wide-bandgap semiconductor matrix. Polarization-charge doping is achieved in ferroelectrics by the creation of charged domain walls. The intentional creation of stable charged domain walls has so far only been reported in BaTiO3 single crystals, with a process that involves cooling the material through its phase transition under a strong electric bias, but this is not a viable technology when real-time reconfigurability is sought in working devices. Here, we demonstrate a technique allowing the creation and nanoscale manipulation of charged domain walls and their action as a real-time doping activator in ferroelectric thin films. Stable individual and multiple conductive channels with various lengths from 3 μm to 100 nm were created, erased and recreated in another location, and their high metallic-type conductivity was verified. This takes the idea of hardware reconfigurable electronics one step forward.

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Orientation instability of domain boundary in ferroelectrics

Cited by 14 publications

References 3 publications

Efficient Switching and Domain Interlocking Observed in Polyaxial Ferroelectrics

Efficient Switching and Domain Interlocking Observed in Polyaxial Ferroelectrics

Phase front shapes in the KD₂PO₄paraelectric-ferroelectric transition

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

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Orientation instability of domain boundary in ferroelectrics

Cited by 14 publications

References 3 publications

Efficient Switching and Domain Interlocking Observed in Polyaxial Ferroelectrics

Efficient Switching and Domain Interlocking Observed in Polyaxial Ferroelectrics

Phase front shapes in the KD2PO4paraelectric-ferroelectric transition

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

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Phase front shapes in the KD₂PO₄paraelectric-ferroelectric transition