Oriented boron carbide films produced by laser spraying

Kervalishvili, P. D.; Shalamberidze, Sulkhan; Bikovsky, Yu. A.

doi:10.1063/1.40830

Cited by 7 publications

(3 citation statements)

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“…The practical importance of this investigation consists of the possibility to create new technologies for the production of ultra-dispersive materials with given crystalline or amorphous structure and the requisite properties [32,33]. Recent experimental studies of small solids -particles, and structural elements of some nonorganic (carbon, cobalt, etc.)…”

Section: Nanostructures Of Wide Forbidden Zone Conductorsmentioning

confidence: 99%

Semiconductive Nanostructures - Materials for Spinelectronics: New Data Bank Requirement

Kervalishvili

2007

Data Sci. J.

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Section: Nanostructures Of Wide Forbidden Zone Conductorsmentioning

confidence: 99%

Semiconductive Nanostructures - Materials for Spinelectronics: New Data Bank Requirement

Kervalishvili

2007

Data Sci. J.

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“…11,12 Controlled formation of these twinned crystals could be used to approximate and study boron-carbide-based quasicrystals. However, to fully explore r-B x C as a semiconductor, thin films with high crystalline quality, preferably epitaxially grown are needed, but the growth of epitaxial r-B x C crystals has proved to be challenging 13 using vapor phase deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001̄) and 4H-SiC(0001) substrates by chemical vapor deposition

et al. 2022

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“…11,12 Controlled formation of these twinned crystals could be used to approximate and study boron-carbide-based quasicrystals. However, to fully explore r-BxC as a semiconductor, thin films with high crystalline quality, preferably epitaxially grown are needed, but the growth of epitaxial r-BxC crystals has proved to be challenging 13 using vapor phase deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(𝟎𝟎𝟎𝟏̅) and 4H-SiC(0001) substrates by chemical vapor deposition

Souqui

Sharma

Högberg

et al. 2022

Preprint

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Boron carbide in its rhombohedral form (r-BxC), commonly denoted B4C or B13C2, is a well-known hard material, but it is also a potential semiconductor material. We deposited r-BxC by chemical vapor deposition between 1100 °C and 1500 °C from triethylboron in H2 on 4H-SiC(0001) and 4H-SiC(0001̅). We show, using ToF-ERDA, that pure B4C was grown at 1300 °C, furthermore, using XRD that graphite forms above 1400 °C. The films deposited above 1300 °C on 4H-SiC(0001̅) were found to be epitaxial, with the epitaxial relationships B4C(0001)[101̅0]∥ 4H-SiC(0001̅)[101̅0] obtained from pole figure measurements. In contrast, the films deposited on 4H-SiC(0001) were polycrystalline. We suggest that the difference in growth mode is explained by the difference in the ability of the different surfaces of 4H-SiC to act as carbon sources in the initial stages of the film growth.

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Oriented boron carbide films produced by laser spraying

Cited by 7 publications

References 0 publications

Semiconductive Nanostructures - Materials for Spinelectronics: New Data Bank Requirement

Semiconductive Nanostructures - Materials for Spinelectronics: New Data Bank Requirement

Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001̄) and 4H-SiC(0001) substrates by chemical vapor deposition

Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(𝟎𝟎𝟎𝟏̅) and 4H-SiC(0001) substrates by chemical vapor deposition

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