Metal oxide libraries for the photoelectrochemical oxygen evolution reaction (OER) based on CuWO x with different third and fourth elements were prepared by calcination of inkjetprinted precursor solution in compositional arrays and screening by scanning photoelectrochemical microscopy and scanning electrochemical microscopy in the sample-generation/tip-collection mode. Based on Cu 48 Ga 3 W 49 O x known as an active material from previous studies, the influence of other trivalent metal ions (M 3+ = Al and In) was tested in ternary Cu−M−W metal oxide systems. While Al doping did not have positive effects, Cu 44 In 2 W 54 O x showed photoactivity comparable to that of Cu 48 Ga 3 W 49 O x . The activity of both was surpassed by that of the quaternary oxide system Cu 45 In 1 Ga 3 W 51 O x . Raman spectroscopy, grazing incidence X-ray diffraction (GI-XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS) reveal no structural changes in the ternary or quaternary hit compositions, irrespective of the used M 3+ dopant. Raman spectroscopy and GI-XRD show a phase-pure triclinic crystal structure similar to that of undoped CuWO 4 . XPS proves the incorporation of trivalent cations (Ga 3+ , In 3+ ). Valence band spectra identified increased n-type character of all hit materials compared to CuWO 4 , which is based on a larger E VBM (at roughly constant band gap) of the doped materials compared to CuWO 4 . Furthermore, quaternary systems combining doping with trivalent group 13 elements (Ga 3+ or In 3+ ) with transition metal cations (Ni 2+ or Co 2+ ) identified Cu 46 In 2 Ni 2 W 50 O x as a material with photoactivity higher than that of Cu 44 In 2 W 54 O x . While the photoactivity and n-type character of Cu 46 In 2 Ni 2 W 50 O x are comparable to those of Cu 45 In 1 Ga 3 W 51 O x , the former composition becomes a promising lead structure for the photoanode material by its considerably increased stability in alkaline solution under illumination.